期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 147, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2022.106709
关键词
Ultraprecision polishing; 3C-SiC; Contact types; Material removal mode; Graphitization of diamond
类别
资金
- National Natural Science Foundation of China [52075208, U20A6004]
Through molecular dynamics simulation, the study reveals that the self-rotation of diamond abrasives during polishing significantly impacts the polishing characteristics of SiC wafers, reducing structural damage and frictional forces.
To better understand the effects of different contact types on polishing characteristics of SiC wafer, the different contact types during polishing are simplified as the self-rotation of diamond abrasives. Through molecular dy-namics simulation, three different material removal modes are proposed and graphite structure after the wear of diamond was displayed. It is found that the material removal mode of 3C-SiC changes from cutting removal to adhesion removal via compression removal, and finally returns to cutting removal, with the increase of the abrasive linear velocity. The wear of diamond abrasive is the most serious when there is no self-rotation, and graphite will form after diamond is worn. When the abrasive only rolls forward, the wear of diamond abrasive is the least, and the material removal rate is also the least. The self-rotation of diamond abrasives can significantly reduce the structural damage of the workpiece and the increment of system temperature and potential energy. Also, the self-rotation of abrasives can reduce the tangential force, which leads to the decrease of friction co-efficient. Based on the above results, it is proved that the self-rotation of abrasive particles in the polishing process cannot be ignored.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据