Highly improved performance in Ta/MoO3/Pt structure by optimizing molybdenum oxide sputtering process for resistive switching memory

The excellent resistive switching (RS) performances based on Ta/MoOx/Pt device were achieved by controlling the deposition temperature and the thickness of MoOx. The results of X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy confirmed that the deposition temperature has a significant influence on the MoOx crystalline form and oxygen vacancy content. Compared with the samples deposited at other temperatures (room temperature, 300 degrees C and 500 degrees C), MoO3 sputtered at 400 degrees C obtained nanocrystals with appropriate oxygen vacancies, resulted in improved RS performance. When the 50 nm MoO3 was sputtered at 400 degrees C, the device showed an ultra-low RS current (10 mu A), large HRS/LRS ratio (>104), high endurance (108 cycles) and stable data storage capacity at 85 degrees C (10 years). This research provides a simple method to design highperformance memory devices.

Automated summary

Excellent resistive switching performances were achieved based on Ta/MoOx/Pt device by controlling the deposition temperature and the thickness of MoOx. The deposition temperature has significant influence on the crystalline form and oxygen vacancy content of MoOx. Sputtered MoO3 at 400 degrees C obtained nanocrystals with appropriate oxygen vacancies, resulting in improved resistive switching performance.