Pure-phase Ga2O3 films were deposited on sapphire substrates by radio frequency magnetron sputtering

Epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. XRD patterns showed that the films deposited on a-plane substrates were mixed polymorphs, the films on c-plane were pure-phase ((2) over bar 01) beta-Ga2O3, and m-, and r-planes were pure-phase (300) and (01 (1) over bar) alpha-Ga2O3, respectively. AFM and SE were measured to help determine the optimal growth conditions. The optical transmission spectra showed that the prepared Ga2O3 films on different substrate planes have a bandgap of 4.88-5.30 eV.

Automated summary

In this study, epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. The films exhibited different polymorphs depending on the substrate plane, and had a bandgap of 4.88-5.30 eV.