High-resistance thermally stable silicon layers produced by the CO+ ion implantation

The high-resistance silicon layers were formed by the CO+ ion implantation of silicon substrates and a subsequent annealing at 1100 degrees C. The structural and electric properties of the ion-implanted layers were studied. The formation of 3C-SiC and 6H-SiC nanocrystals was obtained in the ion implanted layers. It was shown that the formation of SiC precipitates results in the positive charge compensation in the buried SiO2 layer of a silicon-on insulator structure. The origin of the obtained results is discussed.

Automated summary

In this study, high-resistance silicon layers were formed by CO+ ion implantation and subsequent annealing on silicon substrates. The structural and electric properties of the ion-implanted layers were investigated. The results showed the formation of 3C-SiC and 6H-SiC nanocrystals in the ion-implanted layers and the positive charge compensation in the buried SiO2 layer of a silicon-on-insulator structure. The origin of these results was discussed.