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Synthesis of N-Substituted Maleimides and Poly(styrene-co-N-maleimide) Copolymers and Their Potential Application as Photoresists

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/macp.202200256

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alternating copolymers; ARGET-ATRP; DUV photolithography

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Poly(styrene-co-N-maleimide) copolymers with tert-butoxycarbonyl (t-BOC)-protected amine groups of varying side chain lengths were synthesized and studied for their applications in photoresist. The control of thermal properties and hydrophobicity through alkyl substituents allowed for well-defined line space patterns. Removal of the acid labile t-BOC group during deep-UV exposure resulted in solubility changes and promising lithographic performance in copolymers with shorter alkyl chains.
Poly(styrene-co-N-maleimide) copolymers bearing tert-butoxycarbonyl (t-BOC)-protected amine groups attached to side chains of varying lengths are synthesized via activators regenerated by electron transfer atom transfer radical polymerization (ARGET-ATRP) and investigated from the perspective of photoresist applications. The length of the alkyl substituents enables control of thermal properties as well as hydrophobicity, which are critically important for resist processing. Removal of the acid labile t-BOC group during deep-UV (DUV)exposure shifts solubility in the exposed areas and well-defined line space patterns of 1 mu m are obtained for the selected copolymers. The correlation between glass transition temperature (T-g) and solubility contrast determines the lithographic performance where the copolymers with shorter alkyl chains exhibit promising results.

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