期刊
LASER & PHOTONICS REVIEWS
卷 16, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.202200276
关键词
CsPbBr3 nanocrystals; graphene; photodetection; SnO2
资金
- Fundamental Research Funds for the Central Universities [2022CDJQY-010, 2020CDJQY-A072, 2021CDJQY-022]
- Thousand Talents Program for Distinguished Young Scholars
- Venture and Innovation Support Program for Chongqing Overseas Returnees [cx2020107]
- National Natural Science Foundation of China [61904023, 11974063]
- Natural Science Foundation of Chongqing [cstc2019jcyj-bshX0078, cstc2019jcyjjqX0017]
- National Key R&D Program of China [2017YFE0131900]
- Chongqing Talents Innovation and Entrepreneur Leaders Project [CQYC201903020]
This study reports a large-scale synthesis of SnO2-coated CsPbBr3 nanocrystals, which greatly reduces the carrier recombination rate and improves the stability against water degradation by constructing heterojunction and applying SnO2 coating. A high-performance CsPbBr3@SnO2-graphene hybrid device for photodetection is demonstrated.
The severe recombination of carriers and poor stability against moisture environment have limited the application of CsPbX3 (X = Cl, Br, I) nanocrystals in photodetection. Herein, a large-scale synthesis of SnO2-coated CsPbBr3 NCs (abbreviated to CsPbBr3@SnO2 NCs) has been reported for the first time by combining the water-triggered transformation of Cs4PbBr6 NCs and the hydrolysis of tin 2-ethylhexanoate. Owing to the construction of the CsPbBr3/SnO2 heterojunction, the recombination rate of carriers in the CsPbBr3@SnO2 NCs is greatly reduced compared to that of the pristine CsPbBr3 NCs. The stability against water degradation is also improved due to the protection of the SnO2 coating. Accordingly, a CsPbBr3@SnO2-graphene hybrid device for high-performance photodetection is demonstrated. Results show that the responsivity of the device reaches 6.2 x$\ \ensuremath{\times{}}$10(4) A W-1 at 1 V, which is over 496-fold of the pristine CsPbBr3 device. This work not only provides a robust approach for the surface modification of CsPbX3 NCs but also offers useful guidance on the optoelectronic applications with CsPbX3 NCs.
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