期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 37, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac7986
关键词
atom probe tomography; semiconductor imaging; level set method; field evaporation; data reconstruction; optimisation; correlative microscopy
资金
- EPSRC Impact Acceleration Account Award [EP/R511742/1]
- ESPRC Project Advanced Nuclear Materials [EP/P001645/1]
- FWO-Hercules [ZW13_09, AKUL/15/22]
- CAMECA(R)
- imec pilot line
The authors proposed a new reconstruction protocol in atom probe tomography to correct image distortions for multiphase materials. By applying this new algorithm to experimental semiconductor multilayer systems and fin field-effect transistor devices, a significant reduction in multiphase image distortions was demonstrated. The method could also be used for testing and validating new developments in field evaporation theory by quantitatively comparing model predictions with experimental results.
Traditional reconstruction protocols in atom probe tomography frequently feature image distortions for multiphase materials, due to inaccurate geometric assumptions regarding specimen evolution. In this work, the authors' outline a new reconstruction protocol capable of correcting for many of these distortions. This new method uses predictions from a previously developed physical model for specimen field evaporation. The application of this new model-driven approach to both an experimental semiconductor multilayer system and a fin field-effect transistor device (finFET) is considered. In both systems, a significant reduction in multiphase image distortions when using this new algorithm is clearly demonstrated. By being able to quantitatively compare model predictions with experiment, such a method could also be applied to testing and validating new developments in field evaporation theory.
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