A review of metal-semiconductor contacts for β-Ga2O3

beta-Gallium oxide (beta-Ga2O3) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of beta-Ga2O3-metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga2O3-based devices.

Automated summary

This review summarizes recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, and control methods. These studies provide important insights for both theoretical understanding of the metal/semiconductor interface and the fabrication process for engineering applications of Ga2O3-based devices.