期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 46, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac8818
关键词
beta-gallium oxide (beta-Ga2O3); Ohmic contact; Schottky contact; Schottky barrier height
资金
- National Natural Science Foundation of China [61774019, 61704153]
- Found of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications) [IPOC2018ZZ01]
- BUPT Excellent PhD Students Foundation [CX2022159]
- Fundamental Research Funds for the Central Universities, China
This review summarizes recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, and control methods. These studies provide important insights for both theoretical understanding of the metal/semiconductor interface and the fabrication process for engineering applications of Ga2O3-based devices.
beta-Gallium oxide (beta-Ga2O3) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of beta-Ga2O3-metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga2O3-based devices.
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