Device Simulation of 5.1 nm High-Performance Field-Effect Transistors Based on Two-Dimensional Boron Phosphide

The hexagonal boron phosphide (BP) has attracted much attention due to novel electronic and optical properties. Here, we investigate the performance of the 5.1 nm field-effect transistors (FET) based on two-dimensional (2D) BP by ab initio quantum transport calculations. We used different 2D metal materials to construct van der Waals contact in the source region to replace the conventional doping source. The calculated on-state current of the 5.1 nm BP FET with the Boro Delta source and T-VTe2 source can reach 4891.73 and 4261.85 mu A/mu m. Specifically, the on/off ratio, the effective delay time (Tau), and power-delay product (PDP) of these FETs outperform the standard of ITRS for high-performance transistors. Compared with the conventional doping sources, Boro Delta and T-VTe2 sources with vdW contact show lower SS and greater device performance. Therefore, our results can become a candidate for future high-performance FET.

Automated summary

Researchers investigate the performance of 5.1 nm field-effect transistors (FETs) based on two-dimensional (2D) BP using ab initio quantum transport calculations. They use different 2D metal materials to construct van der Waals contacts in the source region, replacing conventional doping sources. The results show that FETs with Boro Delta and T-VTe2 sources with van der Waals contact exhibit superior performance.