Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Mn2Ge2Te6 shows intrinsic ferromagnetic (FM) order, with a Curie temperature (Tc) of 316 K. The FM order origins from superexchange interaction between Mn and Te atoms. Mn2Ge2Te6 is half-metal (HM), and spin-beta electron is a semiconductor with a gap of 1.462 eV. Mn2Ge2Te6 tends to show in-plane anisotropy (IPA), with a magnetic anisotropy energy (MAE) of -13.2 meV/f.u. Mn2Ge2Te6 shows good dynamical and thermal stability. Moreover, Mn2Ge2Te6 presents good ferromagnetic and half-metallic stability under charge doping. The carrier doping could effectively tune magnetic and electronic properties. Specifically, the magnetic moment, exchange parameter, and MAE could be efficiently tuned. The total magnetic moment changes linearly with charge doping. The magnetic exchange parameters could be controlled by the doping carriers. The carrier doping could modulate MAE to -18.4 (+0.4 e), -0.85 (-1.6 e), and 1.31 (-2.4 e) meV/f.u., by changing hybridization between Te atom's p(y) and p(z) orbitals. Mn2Ge2Te6 with intrinsic ferromagnetism, high tunable MAE, good stability of ferromagnetism, and half-metallicity could help researchers to investigate its wide application in electronics and spintronics.

Automated summary

Mn2Ge2Te6 exhibits intrinsic ferromagnetism and half-metallicity with good stability and tunable magnetic anisotropy energy. Carrier doping can effectively modulate the magnetic and electronic properties.