Dielectric properties of Bi(M2/3Nb1/3)O3 (M = Ni, Mg, Zn) ceramics

Lead-free Bi(M2/3Nb1/3)O-3 (M = Mg, Zn, Ni) ceramics were successfully prepared via conventional solid state sintering route and their structural, microstructural, and dielectric properties were investigated. Mg- and Ni-based samples crystallized into a single-phase cubic structure while a secondary phase was formed for Zn-based sample which was confirmed from the X-ray diffraction data. Microstructure analysis of the samples revealed non-uniform grain growth with an average grain size of 0.4, 0.5 and 2 mu m for Mg, Zn, Ni-based samples, respectively. The relative permittivity at room temperature was found to be similar to 60, 105 and 140 with a tan delta < 0.02 for Mg, Zn and Ni-based samples, respectively. Among these systems, Bi(Zn2/3Nb1/3)O-3 showed temperature stable relative permittivity (100 +/- 15%) stable up to 200 degrees C. The optical band gaps of BNN, BMN and BZN were found to be 2.86, 4.10 and 4.12 eV, respectively.

Automated summary

Lead-free Bi(M2/3Nb1/3)O-3 (M = Mg, Zn, Ni) ceramics were successfully prepared and their structure, microstructure, and dielectric properties were investigated. The samples showed differences in crystal structure, microstructure, and dielectric properties, with Bi(Zn2/3Nb1/3)O-3 exhibiting good temperature stability.