期刊
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 117, 期 -, 页码 65-71出版社
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2021.11.043
关键词
Whisker; MAX phase; DFT; Positron annihilation; Defects
资金
- National Natural Science Foundation of China (NSFC) [51902051, 51731004, 11875248]
- China Postdoctoral Science Foundation [2019M661687]
This study investigated the growth of Sn whiskers from Ti2SnC/Sn-X (X = Sn, Bi, Pb, Ga) samples to understand the role of alloying elements on whiskering behaviors. It was found that the mobility of source Sn atoms plays a critical role in governing the growth rate, with the aggregation of which lowering the enthalpy and promoting whisker growth. The migration of source Sn atoms to the whisker root was spontaneous, making whisker growth intrinsic to the materials, with external factors like compressive stress or oxidation facilitating the whiskering process by enhancing the mobility of source Sn atoms.
The growth of Sn whiskers from Ti2SnC/Sn-X (X = Sn, Bi, Pb, Ga) samples was studied in this work to understand the effect of alloying elements on whiskering behaviors. The mobility of source Sn atoms relating with the formation and migration of defects was found to be the critical factor dominating the growth rate, with the gathering of which to grow whiskers on the surface acts as an effective means to lower the enthalpy. As a result, the source Sn atoms would migrate to whisker root spontaneously, making the growth of whiskers the nature of materials, and external factors like compressive stress or oxidation are no more necessary but facilitate the whiskering process by promoting the mobility of source Sn atoms. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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