Growth mechanism of TiN reaction layers produced on AlN via active metal bonding

Interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on c-plane sapphire and a Ti-containing metal brazing or sintering layer using Ag-Cu-TiH2, Ag-TiH2 and Cu-TiH2 pastes have been investigated. The brazed/sintered samples were heated in vacuum at 850 degrees C for 30 min. The TiN layer produced at the metal/AlN interfaces consists of TiN particles < 50 nm in size and grain boundary phases including Al-containing Ag and Al-containing Cu. The Al concentration within the TiN layer decreases as the distance increases from the AlN epitaxial layer. These experimental observations all suggest that when AlN is used as a starting material in the active metal bonding method, interfacial reaction processes take place with the generation of a local Al-based eutectic liquid phase and elemental transport through this eutectic liquid phase.

Automated summary

By investigating the interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN and a Ti-containing metal brazing or sintering layer, it was found that the TiN layer produced at the metal/AlN interfaces consisted of TiN particles smaller than 50 nm and grain boundary phases including Al-containing Ag and Al-containing Cu. The concentration of Al within the TiN layer decreased as the distance increased from the AlN epitaxial layer, indicating the existence of a local Al-based eutectic liquid phase and elemental transport through this eutectic liquid phase.