4.5 Article

Structural and magnetic properties of FeRh films grown on MgO(001) MgO(011) and MgO(111) substrates ,

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出版社

ELSEVIER
DOI: 10.1016/j.jmmm.2022.169442

关键词

FeRh alloy; Thin films; Epitaxy; Phase transition; Magnetism

资金

  1. FAPESP, Brazil [2010/18590-0]
  2. UGC-DAE CSR, Indore, India [CSR-IC-ISUM-01/CRS-284/2019-20/1336]
  3. MHRD, India

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The effect of substrate orientation on the structural and magnetic properties of FeRh thin films is studied. FeRh films with different orientations are obtained on MgO substrates. It is found that lattice strain can tune the temperature of the antiferromagnetic-ferromagnetic phase transition, and a larger thermal hysteresis is observed.
FeRh thin films are grown on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) single-crystal substrates at 600 degrees C by dc magnetron sputtering and post-annealed at the same temperature for 1 h. Effect of substrate orientation on structural and magnetic properties of FeRh films is studied using X-ray diffraction (Cu-K alpha and synchrotron radiation), temperature, and field dependent magnetization measurements. FeRh(0 0 1), (1 1 2), (0 1 1) orientated films with CsCl ordering are obtained on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) substrates, respectively. Epitaxial quality of FeRh(0 0 1) is relatively better than FeRh(1 1 2) and FeRh(0 1 1) films. The FeRh(0 1 1) film grows on two orientation relationships: Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS). Temperaturedependent out-plane XRD measurements indicate an increase in c-parameter -0.56% to 0.62% across the AF-FM phase transition. The c/a ratio indicate that FeRh(0 0 1) film has in-plane compressive strain, while FeRh(1 1 2) and FeRh(0 1 1) films have tensile strain. The c/a ratio and temperature-dependent magnetization measurements (M-T) indicate that AF-FM phase transition can be tuned by appx. 52 K (388 K to 440 K) by variation of lattice strain at FeRh/MgO interface. Thermal hysteresis of appx. 12.8 K, 17 K and 22.9 K is observed for FeRh(0 0 1), FeRh(1 1 2) and FeRh(0 1 1) thin films. Larger thermal hysteresis is expected due to relatively poor epitaxial quality of the FeRh(1 1 2) and FeRh(0 1 1) films as compared to FeRh(0 0 1) film. The larger remnant FM component is observed in nominal AF state (room temperature) in all the samples, and is expected due to combined effect of composition inhomogeneity, substrate-induced strain and defects.

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