4.5 Article

Bismuth composition, thickness, and annealing temperature dependence of the spin Seebeck voltage in Bi-YIG films prepared using sol-gel solution and spin-coating method

期刊

出版社

ELSEVIER
DOI: 10.1016/j.jmmm.2022.169416

关键词

Spin Seebeck; Bi-YIG; Sol-gel; Microstructure

资金

  1. JSPS KAKENHI [20K05255]
  2. JST, CREST [JPMJCR21C1]
  3. Collaborative Research Program of the Institute for Chemical Research, Kyoto University [2021-96]
  4. Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT, Japan) , Nagoya University [JPMXP09-F21-NU-0009]
  5. Research Foundation for the Electrotechnology of Chubu [R-02227]
  6. Paloma Environmental Technology Development [2021AY]
  7. JGC-S Scholarship [2123]
  8. Division of Instrumental Analysis, Life Science Research Center, and Research Equipment Sharing Promotion Center, Gifu University
  9. Institute of Materials and Systems for Sustainability (IMaSS)
  10. Grants-in-Aid for Scientific Research [20K05255] Funding Source: KAKEN

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We investigated the dependence of the longitudinal spin Seebeck effect (LSSE) voltage on the Bi composition, film thickness, and annealing temperature (Ta) in BixY3-xFe5O12 (Bi-YIG) films. The LSSE coefficient tended to increase with increasing Bi composition, indicating that Bi substitution enhanced the interface effect and induced effective spin current conversion. Additionally, annealing the Bi-YIG films at 973 K resulted in a larger LSSE, likely due to reduced cracks and smoother surface conditions.
We investigated the Bi composition, film thickness, and annealing temperature (Ta) dependence of the magnitude of the longitudinal spin Seebeck effect (LSSE) voltage in BixY3-x Fe5O12 (0 <= x <= 1.2) (Bi-YIG) films on a Si substrate, prepared using sol-gel solution and spin-coating methods. The Bi-YIG garnet films exhibited a poly-crystalline structure, and the thickness of the film formed by the agglomeration of nanoparticles was approxi-mately 50 nm. The LSSE coefficient (S) of the Bi-YIG/Pt (5 nm) films tends to increase with increasing Bi composition (0 <= x <= 0.8), and the value of the S at x = 0.8 is 1.7 times larger than that at x = 0. When the Bi composition is 0 <= x <= 0.8, the values of the saturation magnetization and resistivity are almost constant regardless of x, and the value of the Gilbert damping constant increases with increasing x, while the values of the spin mixing conductance and maximum Kerr rotation angle are tended to increase with increasing x. This result indicates that the increasing tendency of the S occurs because of the induced of effective spin current conversion in the Pt layer thorough Bi-YIG due to the enhancement of interface effect between the Pt and Bi-YIG by Bi substitution. In addition, a large S is obtained in Bi-YIG films annealed at T-a = 973 K because the films contained few cracks and smooth surface conditions.

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