☆ 4.5 Review

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2022)

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Review Chemistry, Physical

Ferrimagnetic spintronics

Se Kwon Kim et al.

Summary: Ferrimagnets, composed of multiple antiferromagnetically coupled magnetic elements, offer advantages of both ferromagnets and antiferromagnets, including easy control of magnetization by external field, faster dynamics than ferromagnets, and potential for high-density devices. This Review provides a summary of recent progress in ferrimagnetic spintronics, focusing on functionalities such as spin transport, spin texture dynamics, and all-optical switching.

NATURE MATERIALS (2022)

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Article Multidisciplinary Sciences

Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers

Tuo Fan et al.

Summary: In this work, ultrahigh efficient and robust SOT magnetization switching is demonstrated in fully sputtered BiSb topological insulator and perpendicularly magnetized Co/Pt multilayers. Despite being fabricated by magnetron sputtering, the BiSb topological insulator shows a large spin Hall angle and high electrical conductivity, proving its potential for ultralow power SOT-MRAM and other SOT-based spintronic devices.

SCIENTIFIC REPORTS (2022)

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Review Nanoscience & Nanotechnology

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Felix Trier et al.

Summary: Oxide materials exhibit a wide range of functional properties, where electron correlations and spin-orbit coupling play significant roles. Recent advances in oxide spin-orbitronics have led to the realization of exotic phenomena and new functionalities for spintronics applications. The future prospects for this field involve further exploration of spin-charge interconversion, topological spin textures, and the influence of ferroelectricity on spin-orbit-driven effects.

NATURE REVIEWS MATERIALS (2022)

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Article Physics, Applied

Nanosecond ultralow power spin orbit torque magnetization switching driven by BiSb topological insulator

Nguyen Huynh Duy Khang et al.

Summary: Topological insulators (TIs) are potential materials for spin-orbit torque (SOT) switching due to their large spin Hall angle. This study investigated SOT magnetization switching in both thermal activation and fast switching regimes using BiSb topological insulator. The results show differences in zero-Kelvin threshold switching current density for the two regimes, and suggest the potential of BiSb thin film for ultra-low power and fast operation of SOT-based spintronic devices.

APPLIED PHYSICS LETTERS (2022)

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Article Chemistry, Physical

Asynchronous current-induced switching of rare-earth and transition-metal sublattices in ferrimagnetic alloys

Giacomo Sala et al.

Summary: This study investigates the asynchronous sublattice magnetization switching in ferrimagnetic alloys and provides insight into the dynamics of ferrimagnets and the design of spintronic devices. The experiment observed distinct switching regimes and a transient ferromagnetic state. The asynchronous switching is attributed to the master-agent dynamics induced by spin-orbit torques and the weak antiferromagnetic coupling, dependent on the alloy microstructure.

NATURE MATERIALS (2022)

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Article Multidisciplinary Sciences

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

Andrea Meo et al.

Summary: We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions. Our results reveal that the combination of spin orbit torque and spin transfer torque can assist in achieving efficient and fast magnetisation reversal on the sub-nanosecond timescale.

SCIENTIFIC REPORTS (2022)

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Article Multidisciplinary Sciences

Two-dimensional materials prospects for non-volatile spintronic memories

Hyunsoo Yang et al.

Summary: This article provides an overview of the current developments and challenges in regards to MRAM and outlines the opportunities that can arise by incorporating two-dimensional material technologies. The fundamental properties of atomically smooth interfaces, reduced material intermixing, crystal symmetries, and proximity effects are highlighted as key drivers for possible disruptive improvements in MRAM at advanced technology nodes.

NATURE (2022)

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Article Physics, Multidisciplinary

Giant orbital Hall effect and orbital-to-spin conversion in 3d, 5d, and 4f metallic heterostructures

Giacomo Sala et al.

Summary: The research provides a systematic study on the generation, transmission, and conversion of orbital currents in heterostructures comprising 3d, 5d, and 4f metals. The results show that Cr has a giant orbital Hall conductivity of the order of 5 x 10(5)[(h) over bar /2e] Omega(-1) m(-1), and Pt exhibits a strong orbital Hall effect in addition to the spin Hall effect. The introduction of 4f spacers can significantly modulate the interplay between orbital and spin currents.

PHYSICAL REVIEW RESEARCH (2022)

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Review Physics, Applied

Magnetism, symmetry and spin transport in van der Waals layered systems

Hidekazu Kurebayashi et al.

Summary: This review focuses on the spintronic properties of layered materials and emphasizes the importance of optimizing chemical interactions and material symmetries to achieve the best performing material design for spin-orbit torque efficiency.

NATURE REVIEWS PHYSICS (2022)

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Review Materials Science, Multidisciplinary

Spin-orbit torques: Materials, mechanisms, performances, and potential applications

Cheng Song et al.

Summary: The paper reviews recent progress in spin-orbit torque (SOT) in various materials, emphasizing the intrinsic correlation between heterostructures and SOT behaviors. It covers the mechanisms, classification, characterization techniques, and potential applications of SOT.

PROGRESS IN MATERIALS SCIENCE (2021)

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Article Physics, Applied

Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices

Yohei Shiokawa et al.

Summary: This study compares the write properties of two types of SOT-MR devices and measures their external perpendicular magnetic field dependence.

APPLIED PHYSICS EXPRESS (2021)

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Article Nanoscience & Nanotechnology

Symmetry-dependent field-free switching of perpendicular magnetization

Liang Liu et al.

Summary: An out-of-plane spin-orbit torque (SOT) has been observed in an HM/FM bilayer of CuPt/CoPt, referred to as 3m torque, allowing for field-free switching of perpendicular magnetization of the CoPt layer. The 3m torque depends strongly on the relative orientation of current flow and crystal symmetry, and shows good endurance in cycling experiments. Experiments with various SOT bilayers featuring low-symmetry point groups at the interface may reveal further unconventional spin torques in the future.

NATURE NANOTECHNOLOGY (2021)

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Review Chemistry, Multidisciplinary

Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering

Yicheng Guan et al.

Summary: Magnetic racetrack devices are promising candidates for next-generation memories, utilizing spintronic shift-register devices. Efficiency is significantly increased by introducing atomically thin metal dusting layers between the bottom magnetic layer and platinum, with palladium and rhodium dusting layers showing the greatest improvement in domain wall velocity. Interface engineering plays a critical role in the development of efficient racetrack memory devices.

ADVANCED MATERIALS (2021)

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Article Multidisciplinary Sciences

Real-time Hall-effect detection of current-induced magnetization dynamics in ferrimagnets

G. Sala et al.

Summary: A new approach for time-resolved measurements of magnetization reversal is presented, showing activation delays in the current-induced switching of GdFeCo, despite high domain-wall velocity. The method is applicable to various current-induced phenomena and can be combined with non-electrical excitations for pump-probe Hall effect measurements.

NATURE COMMUNICATIONS (2021)

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Article Multidisciplinary Sciences

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

Min-Gu Kang et al.

Summary: The study demonstrates that electric field control of the Rashba effect in Pt/Co/AlOx structures can enable control of the spin-orbit torque and field-free switching of magnetization, providing a new method for electric field modulation of magnetism.

NATURE COMMUNICATIONS (2021)

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Article Multidisciplinary Sciences

Orbital torque in magnetic bilayers

Dongjoon Lee et al.

Summary: The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. Through theory and experiment, the presence of the orbital Hall effect in heavy metals and its potential application in spintronic device technology have been confirmed and explored. This finding contributes to the understanding of spin-orbit-coupled phenomena and orbital engineering in material science.

NATURE COMMUNICATIONS (2021)

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Article Physics, Applied

Engineering of Intrinsic Chiral Torques in Magnetic Thin Films Based on the Dzyaloshinskii-Moriya Interaction

Zhentao Liu et al.

Summary: The study demonstrates that by adjusting the design and structural parameters of the magnetic racetracks, the magnitude of chiral torques can be effectively modified, and also shows that intrinsic torques can propel the spontaneous motion of domain walls even in the absence of external driving forces.

PHYSICAL REVIEW APPLIED (2021)

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Article Physics, Applied

Optimization of Tungsten β-Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory

Kiran Kumar Vudya Sethu et al.

Summary: Switching induced by spin-orbit torque (SOT) is being explored for three-terminal magnetic-tunnel-junction structures, with beta-phase tungsten (beta-W) offering high conversion efficiency, but limited integration feasibility. N and O doping of W extends the beta phase and improves SOT efficiency, showing potential for SOT-MRAM technology integration.

PHYSICAL REVIEW APPLIED (2021)

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Review Chemistry, Multidisciplinary

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

Gabriel Molas et al.

Summary: This paper provides an overview of the evolution and progress of emerging memory technologies, discusses their potential applications in various markets and products, and explores how the rise of artificial intelligence and bio-inspired circuits impact emerging memory technology.

APPLIED SCIENCES-BASEL (2021)

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Article Engineering, Electrical & Electronic

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Wenlong Cai et al.

Summary: The study demonstrates sub-nanosecond field-free switching by the interplay of STT and SOT in perpendicular magnetic tunnel junctions, showing that applying SOT current can significantly decrease the incubation time and current density of STT for ultra-fast switching.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Kewen Shi et al.

Summary: This study demonstrates a NAND-like spin-torque memory unit with an interplay of STT and SOT, which shows improved energy efficiency and faster speed compared to STT alone. The memory unit exhibits great selectivity and reliability in write operations, showcasing potential for high-density, ultrafast, and energy-efficient memory applications.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Physics, Multidisciplinary

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching

Soogil Lee et al.

Summary: The Spin Hall effect enables efficient control of magnetization, while the recent discovery of the orbital Hall effect reveals the potential for larger orbital current generation. However, a conversion process from orbital current to spin current is necessary to exert torque on a ferromagnet. By introducing rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, the orbital Hall torque can be greatly enhanced, allowing for more efficient magnetization control in spin-orbit-torque-based spintronic devices.

COMMUNICATIONS PHYSICS (2021)

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Article Multidisciplinary Sciences

Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

Xuejie Xie et al.

Summary: Breaking inversion symmetry by introducing a compositional gradient allows for repeatable perpendicular magnetization switching in CoPt alloy films using spin-orbit torque, demonstrating a promising strategy for energy-efficient control of memory and logic devices.

NATURE COMMUNICATIONS (2021)

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Article Nanoscience & Nanotechnology

Skyrmion devices for memory and logic applications

Shijiang Luo et al.

Summary: Skyrmions, as topological, particle-like localized structures, have attracted significant attention in physics and materials research since their experimental observation in magnetic materials in 2009. They are regarded as novel information carriers with potential for use in high-density, low-power, and multi-functional spintronic devices. This Perspective provides an overview of the development, structure, and materials of skyrmions, as well as recent progress in skyrmion devices for memory and logic applications, discussing their challenges and prospects.

APL MATERIALS (2021)

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Article Nanoscience & Nanotechnology

Spin-orbit torque characterization in a nutshell

Minh-Hai Nguyen et al.

Summary: Spin current and spin torque generation through spin-orbit interactions in solids, of bulk or interfacial origin, is central to spintronics research. The development of spin-orbit torque (SOT) driven magnetic dynamics and switching in diverse magnetic heterostructures paves the way for novel SOT memory and logic devices. Accurate and efficient SOT quantification techniques are crucial in understanding the role of SOTs in heterostructures.

APL MATERIALS (2021)

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Article Physics, Applied

Time-resolved measurement of magnetization vectors driven by pulsed spin-orbit torque

Young-Gwan Choi et al.

Summary: The article presents a time-resolved measurement technique for studying the pulsed SOT's effect on magnetization, which is crucial for investigating the underlying mechanisms of SOT.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

Roadmap of Spin-Orbit Torques

Qiming Shao et al.

Summary: Spin-orbit torque (SOT) is an emerging technology that allows efficient manipulation of spintronic devices, with interest expanding to various processes beyond electric field manipulation. In the past decade, research has focused on exploring materials for larger SOT efficiency. Recent developments have extended material research to include processes involving phonons, magnons, and heat.

IEEE TRANSACTIONS ON MAGNETICS (2021)

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Article Multidisciplinary Sciences

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Zhenyi Zheng et al.

Summary: This study demonstrates bias-field-free switching of perpendicular ferrimagnets through the use of vertical composition gradient, which induces intrinsic SOTs and gradient-driven DMI to break in-plane symmetry during the switching process. The research provides a novel strategy for designing efficient and compact SOT devices for perpendicular ferrimagnetic materials.

NATURE COMMUNICATIONS (2021)

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Article Multidisciplinary Sciences

Spin orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions

Shinji Isogami et al.

Summary: The study evaluated magnetization switching driven by spin-orbit torque in three terminal magnetic tunnel junctions, showing that the conventional thermally assisted magnetization switching model cannot describe SOT induced switching using short current pulses.

SCIENTIFIC REPORTS (2021)

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Review Physics, Applied

Maximizing spin-orbit torque generated by the spin Hall effect of Pt

Lijun Zhu et al.

Summary: Platinum, with its giant spin Hall conductivity and compatibility with CMOS circuits, has the potential to be an outstanding provider of spin-orbit torques; however, pure clean-limit Pt with low resistivity still provides a low damping-like spin-orbit torque efficiency, limiting its practical applications; the efficiency of spin-orbit torque in Pt-based magnetic heterostructures can be significantly improved by increasing the spin Hall ratio of Pt and the spin transmissivity of the interfaces.

APPLIED PHYSICS REVIEWS (2021)

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Article Physics, Applied

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Viola Krizakova et al.

Summary: This study systematically investigates the impact of dual voltage pulses on the switching performance of three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs). Experimental results and micromagnetic modeling show that different effects play a lead role in assisting SOTs in the magnetization-reversal process depending on the pulse duration and MTJ diameter. A compact model is presented to evaluate the impact of each effect due to the MTJ bias on the critical switching parameters.

PHYSICAL REVIEW APPLIED (2021)

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Article Physics, Applied

Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Y. C. Wu et al.

Summary: The VGSOT writing scheme combines VCMA and SOT effects, impacting SOT switching characteristics, with the VCMA coefficient found to be unaffected by writing speed and gate length. SOT switching current characteristics are linearly modified by gate voltage, indicating a direct change in perpendicular magnetic anisotropy induced by VCMA.

PHYSICAL REVIEW APPLIED (2021)

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Article Nanoscience & Nanotechnology

Topological insulators for efficient spin-orbit torques

Jiahao Han et al.

Summary: This paper summarizes the methods for calibrating the charge-spin conversion efficiency in topological insulators and highlights their superiority as spin-orbit torque generators. Additionally, it reviews the results of magnetic switching under reduced current density in topological insulator/ferromagnet heterostructures.

APL MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Nanoscale domain wall devices with magnetic tunnel junction read and write

E. Raymenants et al.

Summary: In this study, domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design were developed to achieve electrical read and write, as well as fast domain wall motion driven via spin-orbit torque. The devices showed good performance in terms of tunnelling magnetoresistance readout, spin-transfer torque writing, and domain wall depinning efficiency. Overall, the domain wall conduit based on a synthetic antiferromagnet demonstrated potential for reliable domain wall motion and faster write speed compared to a device based on Pt/Co.

NATURE ELECTRONICS (2021)

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Article Materials Science, Multidisciplinary

Orbital Rashba effect in a surface-oxidized Cu film

Dongwook Go et al.

Summary: Experimental observations have shown a significant enhancement of the orbital Rashba effect in a system of oxygen monolayer on top of a Cu film, leading to a strong chiral orbital texture in momentum space; Resonant hybridization between O p states and Cu d states is responsible for the emergence of the orbital Rashba effect at the interface; The application of an external electric field generates colossal orbital Hall currents, indicating a potentially significant role of the orbital torque mechanism in surface oxidized Cu/ferromagnet structures.

PHYSICAL REVIEW B (2021)

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Article Nanoscience & Nanotechnology

Efficient Spin-Orbit Torque Switching with Nonepitaxial Chalcogenide Heterostructures

Tian-Yue Chen et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Chemistry, Multidisciplinary

Magnetic Domain Wall Based Synaptic and Activation Function Generator for Neuromorphic Accelerators

Saima A. Siddiqui et al.

NANO LETTERS (2020)

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Article Nanoscience & Nanotechnology

Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Eva Grimaldi et al.

NATURE NANOTECHNOLOGY (2020)

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Article Multidisciplinary Sciences

Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions

Sachin Pathak et al.

SCIENTIFIC REPORTS (2020)

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Article Physics, Applied

Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells

G. Mihajlovic et al.

PHYSICAL REVIEW APPLIED (2020)

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Article Physics, Applied

Threshold Current Density for Perpendicular Magnetization Switching Through Spin-Orbit Torque

Daoqian Zhu et al.

PHYSICAL REVIEW APPLIED (2020)

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Article Chemistry, Multidisciplinary

Deterministic Spin-Orbit Torque Switching by a Light-Metal Insertion

Armin Razavi et al.

NANO LETTERS (2020)

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Article Multidisciplinary Sciences

Current-driven magnetic domain-wall logic

Zhaochu Luo et al.

NATURE (2020)

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Review Chemistry, Multidisciplinary

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

Yuting Liu et al.

ACS NANO (2020)

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Article Physics, Applied

Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

Viola Krizakova et al.

APPLIED PHYSICS LETTERS (2020)

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Article Chemistry, Multidisciplinary

Control of Spin-Orbit Torques by Interface Engineering in Topological Insulator Heterostructures

Frederic Bonell et al.

NANO LETTERS (2020)

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Article Physics, Multidisciplinary

Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques

Shilei Ding et al.

PHYSICAL REVIEW LETTERS (2020)

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Review Engineering, Electrical & Electronic

Opportunities and challenges for spintronics in the microelectronics industry

B. Dieny et al.

NATURE ELECTRONICS (2020)

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Article Engineering, Electrical & Electronic

Spin-orbit torque switching of a ferromagnet with picosecond electrical pulses

Kaushalya Jhuria et al.

NATURE ELECTRONICS (2020)

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Proceedings Paper Engineering, Electrical & Electronic

High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node

M. Gupta et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

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Article Materials Science, Multidisciplinary

Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions

T. Devolder et al.

PHYSICAL REVIEW B (2020)

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Ultrafast and energy-efficient spin-orbit torque switching in compensated ferrimagnets

Kaiming Cai et al.

NATURE ELECTRONICS (2020)

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Article Engineering, Electrical & Electronic

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

Xiang Li et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)

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Review Physics, Applied

Physics for neuromorphic computing

Danijela Markovic et al.

NATURE REVIEWS PHYSICS (2020)

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Review Engineering, Electrical & Electronic

Neuromorphic spintronics

J. Grollier et al.

NATURE ELECTRONICS (2020)

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Article Physics, Multidisciplinary

Orbital torque: Torque generation by orbital current injection

Dongwook Go et al.

PHYSICAL REVIEW RESEARCH (2020)

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Article Physics, Multidisciplinary

Magnetization switching driven by current-induced torque from weakly spin-orbit coupled Zr

Z. C. Zheng et al.

PHYSICAL REVIEW RESEARCH (2020)

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Article Multidisciplinary Sciences

Chirally coupled nanomagnets

Zhaochu Luo et al.

SCIENCE (2019)

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Article Physics, Applied

Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)

T. Inokuchi et al.

APPLIED PHYSICS LETTERS (2019)

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Review Chemistry, Analytical

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Takayuki Nozaki et al.

MICROMACHINES (2019)

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Article Nanoscience & Nanotechnology

Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient

Shaohai Chen et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

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Article Physics, Applied

Enhancing Spin-Orbit Torque by Strong Interfacial Scattering From Ultrathin Insertion Layers

Lijun Zhu et al.

PHYSICAL REVIEW APPLIED (2019)

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Article Physics, Applied

Cr-induced Perpendicular Magnetic Anisotropy and Field-Free Spin-Orbit-Torque Switching

T. C. Chuang et al.

PHYSICAL REVIEW APPLIED (2019)

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Article Physics, Applied

Field-Free Spin-Orbit-Torque Switching in Co/Pt/Co Multilayer with Mixed Magnetic Anisotropies

Stanislaw Lazarski et al.

PHYSICAL REVIEW APPLIED (2019)

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Article Chemistry, Multidisciplinary

Chiral Domain Wall Injector Driven by Spin-Orbit Torques

T. Phuong Dao et al.

NANO LETTERS (2019)

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Article Multidisciplinary Sciences

Integer factorization using stochastic magnetic tunnel junctions

William A. Borders et al.

NATURE (2019)

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Article Nanoscience & Nanotechnology

All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe2/ferromagnet heterostructures

Shuyuan Shi et al.

NATURE NANOTECHNOLOGY (2019)

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Review Physics, Multidisciplinary

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

A. Manchon et al.

REVIEWS OF MODERN PHYSICS (2019)

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Article Physics, Applied

Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures

L. Rehm et al.

APPLIED PHYSICS LETTERS (2019)

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Article Physics, Multidisciplinary

Room-Temperature Spin-Orbit Torque from Topological Surface States

Hao Wu et al.

PHYSICAL REVIEW LETTERS (2019)

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Article Physics, Applied

Maximizing Spin-Orbit-Torque Efficiency of Pt/Ti Multilayers: Trade-Off Between Intrinsic Spin Hall Conductivity and Carrier Lifetime

Lijun Zhu et al.

PHYSICAL REVIEW APPLIED (2019)

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Article Physics, Applied

Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

Yu Takahashi et al.

APPLIED PHYSICS LETTERS (2019)

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Article Multidisciplinary Sciences

Spin-orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes

W. J. Kong et al.

NATURE COMMUNICATIONS (2019)

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Article Physics, Applied

Skyrmion Logic System for Large-Scale Reversible Computation

Maverick Chauwin et al.

PHYSICAL REVIEW APPLIED (2019)

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Intrinsic spin currents in ferromagnets

V. P. Amin et al.

PHYSICAL REVIEW B (2019)

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Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

Sk Ziaur Rahaman et al.

IEEE ELECTRON DEVICE LETTERS (2018)

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Article Engineering, Electrical & Electronic

Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

Murat Cubukcu et al.

IEEE TRANSACTIONS ON MAGNETICS (2018)

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Article Physics, Applied

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Danny Wan et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2018)

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Article Chemistry, Physical

Spin currents and spin-orbit torques in ferromagnetic trilayers

Seung-heon C. Baek et al.

NATURE MATERIALS (2018)

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Article Physics, Applied

Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

Shengjie Shi et al.

PHYSICAL REVIEW APPLIED (2018)

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Article Engineering, Electrical & Electronic

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Daniel Nagy et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

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Article Multidisciplinary Sciences

Current-induced magnetization switching using an electrically insulating spin-torque generator

Hongyu An et al.

SCIENCE ADVANCES (2018)

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Article Multidisciplinary Sciences

Hybrid chiral domain walls and skyrmions in magnetic multilayers

William Legrand et al.

SCIENCE ADVANCES (2018)

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Article Engineering, Electrical & Electronic

Modular Compact Modeling of MTJ Devices

Mustafa Mert Torunbalci et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

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Article Chemistry, Physical

A conductive topological insulator with large spin Hall effect for ultralow power spin-orbit torque switching

Nguyen Huynh Duy Khang et al.

NATURE MATERIALS (2018)

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Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1-x) films

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