期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 40, 期 14, 页码 4689-4697出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2022.3166783
关键词
Optical filters; Photodetectors; Semiconductor optical amplifiers; Gratings; Band-pass filters; Sensitivity; Reflection; Noise; optical filters; photodetectors; sensitivity
资金
- National Key Research and Development Program of China [2018YFA0209001, 2018YFB2200703]
- National Natural Science Foundation of China [62105183]
- Natural Science Foundation of Shandong Province [ZR2021QF052]
A novel photodetector with enhanced sensitivity through grating assistance has been proposed in this study, achieving high sensitivity at high speeds. For systems with data rates exceeding 40 Gbps, the performance of this photodetector is superior to traditional semiconductor optical amplifiers and avalanche photodiodes.
With an increased demand for high speed and high sensitivity in optical communication system applications, semiconductor optical amplifier (SOA)-PIN photodetectors and AlInAsSb, InGaAs/InAlAs, or Ge/Si based avalanche photodiodes (APDs) have attracted extensive attentions. Nevertheless, their gain-bandwidth products and sensitivities are limited either by the amplified spontaneous emission (ASE) noise of the SOA or by the long avalanche buildup time in the avalanche multiplication process. In this paper, we have proposed a grating-assistant SOA-PIN photodetector (GA-SOA-PIN) aiming at raising its sensitivity by filtering out the ASE noise. Our simulation result shows that it can achieve a sensitivity close to -25 dBm under a transmission data rate of 100 Gbps at 1.55 mu m with a bit error rate (BER) of 10(-12). With a simulated gain-bandwidth product reaches 2.62 THz, for systems with their data rates beyond 40 Gbps, the performance of the proposed GA-SOA-PIN is superior as compared to that achievable by the best available APD and SOA-PIN photodetectors.
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