4.4 Article

Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry

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Summary: In-operando spectroscopic ellipsometry was utilized to study the optical properties of Bi2Se3 films grown on sapphire substrates in a MBE reactor. A refined dielectric model for Bi2Se3 was developed by analyzing SE spectra at different temperatures, enabling real-time monitoring of growth conditions and film thickness. This technique offers a reliable and universal approach for comparing growth conditions and improving reproducibility for Bi2Se3 based films and heterostructures.

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