期刊
JOURNAL OF CRYSTAL GROWTH
卷 592, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2022.126715
关键词
Nanostructures; Molecular beam epitaxy; Quantum dots; Semiconducting III-V materials; Semiconducting gallium arsenide
资金
- German Federal Ministry of Education and Research (BMBF) [16KIS0863]
This study compares different In-deposition schemes to achieve low-density self-assembled InAs quantum dots (QDs) on GaAs(100) substrates. The results show that homogeneous In deposition combined with annealing can achieve high-density QD distribution, while inhomogeneous deposition leads to lower and less reproducible densities of QDs.
We report on a comparison of different In-deposition schemes to achieve low areal densities of self-assembled InAs quantum dots (QDs) on GaAs(100) via the Stranski-Krastanov growth mode employing solid source molecular beam epitaxy. We could realize densities in the range of 10(7)-10(8) QDs/cm(2) utilizing homogeneous In deposition and an annealing step. At least on 70% of a 3 '' wafer the density was between 1 x 10(7 )and 1 x 10(8) QDs/cm(2). To achieve this, the In amount and the substrate temperature were controlled precisely. With inhomogeneous In-deposition via growing without sample rotation, we obtained low QD densities reproducible on a small fraction of the wafer surface. For a full-gradient, i.e., depositing the full In amount without rotation, the low-density area amounts in the best case to 10% of the overall wafer surface, whereas for a half-gradient, i.e. only half the In amount is deposited without rotation, it is 15%. The more In is deposited with substrate rotation, the less reproducible becomes the position of the low-density region on the wafer.
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