Inscription of lateral superlattices in semiconductors using structured light

We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/A1GaAs sample with a Si delta-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.

Automated summary

This paper proposes a non-destructive, all-optical technique to create embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern. The technique is demonstrated on a GaAs/A1GaAs sample with Si delta-doping by inducing charge redistribution in the doping layer. The characteristics of the light-induced superlattice are obtained through the analysis of Weiss commensurability oscillations in the magnetoresistance.