Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

4H-SiC epitaxial layers with ultrahigh resistivity of over 10(10) omega cm were successfully grown by using a hot wall chemical vapor deposition system with vanadium doping. The resistivity of the vanadium doped epilayer was found to be strongly dependent on the types of dopant impurities. The resistivity of n-type-based vanadium doped semi-insulating 4H-SiC epilayers showed stronger dependence on vanadium incorporation than that of p-type-based epilayers. This means that the carrier trap characteristics of vanadium atoms may differ with respect to electrons and holes. As the result, an ultrahigh resistivity of over 10(10) omega cm was realized on an n-type-based 4H-SiC epilayer with vanadium doping. Published under an exclusive license by AIP Publishing.

Automated summary

4H-SiC epitaxial layers with ultrahigh resistivity of over 10(10) omega cm were grown using a hot wall chemical vapor deposition system with vanadium doping, and the resistivity was found to be dependent on the type of dopant impurities.