4.6 Article

Point defect creation by proton and carbon irradiation of α-Ga2O3

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Multidisciplinary

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Alexander Azarov et al.

Summary: In this study, the phenomenon of polymorphism in gallium oxide is investigated. It is found that the amorphization can be significantly suppressed by the phase transition, leading to the fabrication of a highly oriented single-phase film. A novel mode of lateral polymorphic regrowth, not previously observed in solids, is also discovered. These findings open up new directions for research on polymorphs in Ga2O3 and potentially in other materials.

PHYSICAL REVIEW LETTERS (2022)

Review Materials Science, Coatings & Films

Deep level defect states in β-, a-, and e-Ga2O3 crystals and films: Impact on device performance

Alexander Y. Polyakov et al.

Summary: This paper reviews the reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3. The crystalline defects adversely affect the material properties critical to device operation and lead to degraded device operating speed characterized by long recovery transients. More research is needed to understand the microscopic nature of defects in Ga2O3.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

Article Materials Science, Multidisciplinary

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

A. I. Titov et al.

Summary: The mechanisms of ion-induced defect formation and physical characteristics promoting radiation tolerance of wide and ultra-wide bandgap semiconductors, particularly gallium oxide (Ga2O3), are studied in this paper. The results show that the damage formation in Ga2O3 differs from that in gallium nitride (GaN) and is strongly influenced by the polymorph type. Additionally, the study demonstrates that the metastable alpha-Ga2O3 exhibits higher radiation resistance compared to the thermodynamically stable beta-Ga2O3 polymorph. The surface of the samples and dynamic annealing are also found to play significant roles in the ion-induced damage formation processes.

VACUUM (2022)

Article Physics, Applied

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini et al.

Summary: Gallium nitride (GaN) has emerged as an excellent material for power devices, offering advantages such as high-speed/high-voltage and low switching losses. The use of AlGaN/GaN heterostructures allows for the creation of a two-dimensional electron gas with high mobility and large channel density. Research is focusing on vertical device architectures and three-dimensional structures, like fin-shaped, trench-structured, and nanowire-based structures, which show great potential for high power/high-voltage operation.

JOURNAL OF APPLIED PHYSICS (2021)

Article Physics, Applied

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Kentaro Kaneko et al.

Summary: Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films were achieved through unintentional or Mg doping, showing potential for high-quality pn heterojunction formation with n-type alpha-Ga2O3 due to their similar crystal structures and good lattice matching. Initial testing of a pn junction diode composed of these materials demonstrated promising performance.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals

A. Karjalainen et al.

Summary: In this study, positron annihilation was used to investigate beta-Ga2O3, revealing that split Ga vacancies are the primary trapping sites for positrons in the material, with concentrations of at least 1 x 10^18 cm^-3, regardless of dopant type or conductivity.

APPLIED PHYSICS LETTERS (2021)

Article Computer Science, Interdisciplinary Applications

Analysis of positron profiling data using e+DSc computer code

Jerzy Dryzek

Summary: The Green's function method was used to solve the one-dimensional positron diffusion equation for a system with defects of different trapping rates, up to four layers. Analytical relationships were obtained for evaluating data from variable energy positron measurements, implemented in user-friendly free computer code. Fitting strategies were presented for extracting relevant physical parameters, with the code used to determine positron diffusion length in various samples.

COMPUTER PHYSICS COMMUNICATIONS (2021)

Article Physics, Applied

Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

A. Karjalainen et al.

Summary: The study found that hydrogen passivates V-Ga defects in beta-Ga2O3 single crystals during annealing, and the 600 degrees Celsius annealing promotes the formation of complexes containing D or other defects.

JOURNAL OF APPLIED PHYSICS (2021)

Review Materials Science, Multidisciplinary

Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

S. J. Pearton et al.

Summary: Wide bandgap semiconductors such as SiC and GaN face challenges in space and avionic applications due to susceptibility to radiation damage, while ultra-wide bandgap semiconductors like Ga2O3, diamond, and BN show promising radiation resistance characteristics for high-energy applications. More research is needed on the response of these semiconductor materials to radiation, especially in single event effects.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2021)

Article Physics, Applied

Compensation of Shallow Donors by Gallium Vacancies in Monoclinicβ-Ga2O3

Santosh K. Swain et al.

Summary: The study reveals the existence of a compensating level below the conduction band in the O2-annealed B-Ga2O3:Zr sample, possibly caused by the relaxed split Ga vacancy. The sample shows a significant increase in resistivity after annealing under oxygen atmosphere, and also exhibits unique vacancy characteristics and anisotropy in the monoclinic lattice.

PHYSICAL REVIEW APPLIED (2021)

Article Physics, Applied

Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3vertical rectifiers

E. B. Yakimov et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Article Materials Science, Multidisciplinary

Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in β-Ga2O3

Antti Karjalainen et al.

PHYSICAL REVIEW B (2020)

Article Materials Science, Multidisciplinary

Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

A. Y. Polyakov et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

M. E. Ingebrigtsen et al.

APL MATERIALS (2019)

Article Physics, Applied

Energetics and electronic structure of native point defects in α-Ga2O3

Takuma Kobayashi et al.

APPLIED PHYSICS EXPRESS (2019)

Article Physics, Multidisciplinary

Development of Positron Annihilation Spectroscopy at Joint Institute for Nuclear Research

M. Eseev et al.

ACTA PHYSICA POLONICA A (2019)

Article Physics, Applied

Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi et al.

JOURNAL OF APPLIED PHYSICS (2019)

Article Materials Science, Multidisciplinary

Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg)

A. Y. Polyakov et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Review Materials Science, Multidisciplinary

Radiation damage effects in Ga2O3 materials and devices

Jihyun Kim et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Review Materials Science, Multidisciplinary

Gallium oxide solar-blind ultraviolet photodetectors: a review

Jingjing Xu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Article Physics, Applied

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Kentaro Kaneko et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2018)

Review Physics, Applied

A review of Ga2O3 materials, processing, and devices

S. J. Pearton et al.

APPLIED PHYSICS REVIEWS (2018)

Article Physics, Applied

Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

A. Y. Polyakov et al.

APPLIED PHYSICS LETTERS (2018)

Article Physics, Applied

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton et al.

JOURNAL OF APPLIED PHYSICS (2018)

Proceedings Paper Physics, Applied

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

P. B. Lagov et al.

5TH INTERNATIONAL CONGRESS ON ENERGY FLUXES AND RADIATION EFFECTS 2016 (2017)

Article Materials Science, Multidisciplinary

Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3

Peter Deak et al.

PHYSICAL REVIEW B (2017)

Proceedings Paper Physics, Applied

Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

Y. S. Pavlov et al.

II CONFERENCE ON PLASMA & LASER RESEARCH AND TECHNOLOGIES (2016)

Proceedings Paper Engineering, Electrical & Electronic

Magnetic Buncher Accelerator for Radiation Hardness Research and Pulse Detector Characterization

Yuri S. Pavlov et al.

2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) (2015)

Article Physics, Multidisciplinary

Defect identification in semiconductors with positron annihilation: Experiment and theory

Filip Tuomisto et al.

REVIEWS OF MODERN PHYSICS (2013)

Article Physics, Applied

Band bending and surface defects in β-Ga2O3

T. C. Lovejoy et al.

APPLIED PHYSICS LETTERS (2012)

Article Instruments & Instrumentation

Determination of absolute defect concentrations for saturated positron trapping - deformed polycrystalline Ni as a case study

R Krause-Rehberg et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2005)