期刊
JOURNAL OF APPLIED PHYSICS
卷 132, 期 3, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0100359
关键词
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资金
- Ministry of Science and Higher Education of the Russian Federation [HDTRA1-20-2-0002]
- Defense Threat Reduction Agency (DTRA) [HDTRA1-20-2-0002]
- NSF DMR [1856662]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1856662] Funding Source: National Science Foundation
Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were characterized after irradiation with protons and C ions, revealing the introduction of defect-related energy levels and the formation of a conducting layer.
Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 x 10(15) cm(-2) and with 7 MeV C4+ ions with a fluence of 1.3 x 10(13) cm(-2) and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance-frequency (C-f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at E-c-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium-oxygen divacancies V-Ga-V-O, and oxygen vacancies V-O. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of V-Ga and V-Ga-V-O.
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