期刊
JOURNAL OF APPLIED PHYSICS
卷 132, 期 1, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0087562
关键词
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资金
- National Key Research and Development Program of China [2019YFB2005800]
- Science Center of the National Science Foundation of China [52088101]
- Natural Science Foundation of China (NSF) [52130103, 12174426, 12104486, 51971026, 11874082]
- ISF-NSFC Joint Research Program [51961145305]
- State Key Laboratory for Advanced Metals and Materials [2019Z-10]
- Beijing Natural Science Foundation Key Program [Z190007]
- Fundamental Research Funds for the Central Universities [FRF-TP-16-001C2]
Current-induced magnetization switching (CIMS) was observed in epitaxial L1(0)-FePt/CrxPt1-x heterostructures with large perpendicular magnetic anisotropy. The critical switching current density decreased with increasing Cr content and was significantly reduced in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling.
The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L1(0)-FePt/CrxPt1-x (0 & LE; x & LE; 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (J(c)) in FePt/CrxPt1-x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin-orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1-x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L1(0)-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing. Published under an exclusive license by AIP Publishing.
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