4.7 Article

UV-laser annealing for improved resistive switching performance and reliability of flexible resistive random-access memory

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 908, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.164658

关键词

Resistive random access memory (RRAM); Flexible electronic; Laser annealing; Mixed interface layer

资金

  1. Basic Science Research Program of the National Research Foundation of Korea (NRF) - Ministry of Education (MSIT) [2019R1F1A1062290]
  2. National Research Foundation of Korea [2019R1F1A1062290] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study fabricates a high-performance flexible RRAM device using a precisely controlled UV laser annealing process, which changes the concentration of O Frenkel defect pairs in the ZnO layer and produces a ZnO/Al mixed interface layer with high quality oxygen reservoirs. The laser-annealed flexible RRAM shows stable resistive switching, performance enhancement, high on/off ratio, cycling endurance, and low power consumption, even at a bending radius of up to 5 mm.
Flexible resistive random-access memory (RRAM) has attracted significant attention owing to the strong demand for various flexible electronic memory devices. However, fabricating reliable and flexible RRAM is a significant challenge because of the inherently high thermal sensitivity of plastic substrates. In this study, a high-performance flexible RRAM device was fabricated without deforming a plastic substrate by utilizing a precisely controlled UV laser annealing process. The application of laser annealing in an Al/ZnO/Al flexible RRAM changes the concentration of O Frenkel defect pairs in the ZnO layer and produce a ZnO/Al mixed interface layer with high quality oxygen reservoirs. The higher concentration of O Frenkel defect pairs in the ZnO layer induces electroforming-free process, and the improved characteristics such as crystallinity, morphology, and stoichiometry of the interface area result in stable resistive switching and performance enhancement in the flexible RRAM. The laser-annealed flexible RRAM exhibits a high on/off ratio (~1.07 x 10(4)), high cycling endurance (up to 2.5 x 10(3) cycles), and low power consumption (4.88 mu W in SET state and 1.21 mu W in RESET state). Importantly, the performance was maintained at a bending radius of up to 5 mm. (C) 2022 Elsevier B.V. All rights reserved.

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