Hydrogenation and annealing impact on Si/CdTe junction for solar energy application

In the present research work, author has deposited CdTe thin film on N-type Si substrate, by a thermal evaporation method. The Hind High vacuum system had used, under the pressure of 10-5 torr, and investigated the effect of hydrogenation and annealing on Si/ CdTe junction. The current-voltage (I-V) characteristics of the Si/CdTe junction have obtained using Keithley power supply. The I-V characteristics have found change with hydrogenation and annealing. The Scanning electron micrograph (SEM) image of the Si/CdTe junction indicates that the CdTe layer deposited on the substrate has regular and crystalline in structure. The change in I-V characteristics with both Hydrogenation and Annealing make it useful in hydrogen and light sensing device. (c) 2022 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

Automated summary

In this research, CdTe thin film was deposited on N-type Si substrate using a thermal evaporation method. The effect of hydrogenation and annealing on the Si/CdTe junction was investigated. The current-voltage (I-V) characteristics of the Si/CdTe junction were obtained and found to change with hydrogenation and annealing. Scanning electron microscopy (SEM) images showed that the deposited CdTe layer had a regular and crystalline structure. The changes in I-V characteristics with hydrogenation and annealing make it useful for hydrogen and light sensing devices.