Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch

Scalable modeling and parameter extraction of the millimeter-wave GaAs-based p-i-n diode for W-band switch design are presented in this article. A direct-extraction method based on the S-parameters on-wafer measurement is utilized to determine the extrinsic and intrinsic model parameters without any de-embedding test structures. Under turn-ON and turn-OFF bias conditions, the modeled input reflection coefficients agree well with the measured data in the entire frequency ranges for GaAs-based p-i-n diode. The scalable normalization rules have been used to design W-band p-i-n diode switch successfully; good agreements are obtained between the simulated and measured data to verify the accuracy of the proposed model.

Automated summary

This article presents a scalable modeling and parameter extraction method for millimeter-wave GaAs-based p-i-n diodes, which is applied to W-band switch design. The experimental results demonstrate that this method can accurately extract model parameters and successfully design p-i-n diode switches.