期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 7, 页码 4016-4021出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3175444
关键词
Ferroelectrics (FEs); HfZrO2 (HZO); metal-ferroelectric-metal (MFM) capacitor; negative capacitance (NC); nucleation-limited switching (NLS) model
资金
- Semiconductor Research Corporation (SRC) [2018-LM-2832, 2020-LM-3000]
The existence of negative capacitance (NC) and the switching dynamics of ferroelectric HfZrO2 (FE-HZO) metal-ferroelectric-Metal (MFM) structures are still contentious and unclear. This work provides a detailed study of the switching characteristics of HZO MFM structures and demonstrates that there is no evidence of NC effect. The study emphasizes the crucial role of parasitics in the dynamic characterization of R-MFM circuits.
The existence of negative capacitance (NC) and the switching dynamics of ferroelectric HfZrO2 (FE-HZO) metal-ferroelectric-Metal (MFM) structures are still contentious and unclear. Experiments with HZO MFM structures have yielded contradictory results. In this work, we perform a detailed study of the switching characteristics of HZO MFM structures. We have developed a pulse measurement setup that aims to minimize and carefully calibrate all circuit and sample parasitics. This allows us to isolate the intrinsic dynamic response of MFM FE-HZO structures. In contrast to other reports ON resistor-MFM (R-MFM) networks, no evidence of NC effect is observed over a broad range of conditions. Instead, in all cases, the extracted charge-voltage characteristics closely match the quasi-static hysteresis loop. In addition, we have confirmed that charge-voltage loops under the fast switching MFM configuration achievable in our experimental setup are consistent with those of R-MFM networks. Our study makes evident the crucial role of parasitics in the dynamic characterization of R-MFM circuits and the potential for misinterpretation of NC effects.
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