High-Performance β-Ga2O3-Based Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Under Zero Gate Bias

In this work, a high-performance beta-Ga2O3-based solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) is demonstrated. SBPT exhibits excellent photoelectrical properties when the gate voltage (V-GS) bias is at 0 V, including a large photo- dark current ratio ( PDCR) of 1.5 x 10(6), a high responsivity (R) of 1.3 x 10(7) A/W, a large externalquantum efficiency (EQE) of 6.4x10(7)% and a high detectivity (D*) of 4.8 x 1018 Jones. Decay time (tau(d)) is extracted to be 454 ms. The ultrahigh photoresponse performance of the device illustrates that SBPT working at the gate bias of 0 V provides a potential route for the application of solar-blind photodetector (SBPD).

Automated summary

This work demonstrates a high-performance beta-Ga2O3-based solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT). The SBPT exhibits excellent photoelectrical properties at a gate voltage of 0 V, including a large photo-dark current ratio, high responsivity, large external quantum efficiency, and high detectivity. The ultrahigh photoresponse performance of the device suggests that SBPT working at a gate bias of 0 V provides a potential route for the application of solar-blind photodetectors.