BCM Learning Rules Emulated by a-IGZO-Based Photoelectronic Neuromorphic Transistors

Hardware implementation of Bienenstock-Cooper-Munro (BCM) learning rules would be of great implications toward artificial intelligent systems. In this work, amorphous indium gallium zinc oxide (a-IGZO)-based photoelectronic neuromorphic transistors were proposed for mimicking BCM learning rules. A SiO2 electrolyte film with a large electric-double-layer capacitance (0.33 mu F/cm(2)) was used for the gate dielectric film. Light induced short-term synaptic plasticity can be mimicked by such device, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and high-pass temporal filtering. More importantly, BCM learning rules are realized based on this photoelectronic neuromorphic transistor. These results would provide a step forward the development of photoelectronic neuromorphic systems with sophisticated learning rules.

Automated summary

In this study, amorphous indium gallium zinc oxide transistors were used to mimic light-induced short-term synaptic plasticity and successfully realize BCM learning rules. This is of great significance for the development of photoelectronic neuromorphic systems with sophisticated learning rules.