期刊
ADVANCED FUNCTIONAL MATERIALS
卷 26, 期 4, 页码 507-513出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201503522
关键词
annealing; interfaces; photoelectron spectroscopy; resistive memory; titanium dioxide
类别
资金
- Italian Ministry of Research through project PRIN Interfacce di ossidi: nuove proprieta emergenti, multifunzionalita e dispositivi per l'elettronica e l'energia (OXIDE)
- Progetto Strategico di ricerca di interesse nazionale NFFA [B91J12000310001]
- SmartLab [EP/K00509X/1]
- EU-FP7 RAMP
- [EP/K017829/1]
- Engineering and Physical Sciences Research Council [EP/K009877/1, EP/K017829/1, EP/K00509X/1] Funding Source: researchfish
- EPSRC [EP/K009877/1, EP/K017829/1, EP/K00509X/1] Funding Source: UKRI
TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film bulk properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.
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