Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors

A high-performance indium oxide (In2O3)-based thin-film transistor (TFT) was prepared with aluminum oxide/fluorinated self-assembled monolayer (Al2O3/F-SAM) double-gate dielectric layer. The Al2O3/F-SAM double gate dielectric layer improved the performance of the In2O3-based TFT by reducing the device leakage current. In addition, devices with a double-gate dielectric layer show improved stability under negative bias stress testing compared to devices with a single gate dielectric layer (Al2O3), shifting a threshold voltage by only 0.4 V. These results suggest that the Al2O3/F-SAM double-layer gate dielectric layer can enhance the performance of In2O3-based TFTs. Furthermore, it can be used to improve the performance of other metal oxide-based devices by minimizing the leakage current at low operating voltages at low cost.

Automated summary

The study improved the performance of In2O3-based TFTs by using an Al2O3/F-SAM double-gate dielectric layer, reducing leakage current and enhancing stability; the results show that this double-layer gate dielectric layer can enhance not only the performance of In2O3-based TFTs, but also other metal oxide-based devices, by reducing leakage current and improving performance at low operating voltages.