Revealing the Influence of Oxygen Doping on the Crystallization Kinetics of Sb-GeO2

Gas doping is an effective way for enhancing thermal stability significantly for phase-change materials, but the negative effects are not studied extensively. In this work, we investigated the influences of different oxygen-doping concentrations on the crystallization kinetics of Sb-GeO2 (SGO) films. The nanocomposite SGO film, which consists of strong GeO2 and a fragile Sb matrix, exhibits a distinct fragile-to-strong crossover (FSC) behavior. It implies that there is a potential ability to balance the crystallization speed and thermal stability in the SGO material. Nevertheless, such FSC behavior becomes weak with the introduction of additional oxygen, and it totally vanishes after more oxygen introduction. It was confirmed that the fade of FSC behavior in additional O2-doped SGO films is closely related to the formation and separation of the Sb2O3 phase in amorphous and crystalline structures, respectively. The introduction of a large amount of oxygen improves the thermal stability of the SGO film, but the crystal growth rate decreases obviously. The maximum crystal growth rate (Umax) is 2.3 m s-1 for the SGO film, and the Umax of SGO with additional O2 of 15 and 17% (O2/Ar ratio) is 1.2 and 0.6 m s-1, respectively. The quantitative analysis on kinetic features provides us an opportunity to study both the advantages and disadvantages of oxygen introduction into the phase-change matrix.

Automated summary

Gas doping has shown to enhance thermal stability for phase-change materials, but in this study, the negative effects of different oxygen-doping concentrations on the crystallization kinetics of Sb-GeO2 (SGO) films were investigated. It was found that introducing additional oxygen weakened the fragile-to-strong crossover (FSC) behavior, and increased thermal stability but decreased crystal growth rate significantly for the SGO film.