☆ 4.7 Article

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

CRYSTAL GROWTH & DESIGN (2022)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Multidisciplinary

Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Rongrong Chen et al.

Summary: Mg-doped p-GaN was annealed in a N-2 environment to fabricate porous p-GaN for the first time. Pore size and density increased with the rising annealing temperature, and the best crystal quality was obtained at 1050 degrees C. The formation of porous structures was attributed to the decomposition of GaN molecules located at defects in the p-GaN epitaxial film. Porous p-GaN epitaxial wafers exhibited improved carrier mobility, light response speed, surface state density, and visible light transmittance compared to the as-grown sample.

JOURNAL OF MATERIALS SCIENCE (2022)

添加到收藏夹

Article Optics

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Bingyang Sun et al.

Summary: A CuSCN/Ga2O3 heterojunction device was fabricated using spin-coating and metal-organic chemical vapor deposition methods, demonstrating high sensitivity and self-powered performances under 254 nm deep ultraviolet light. The device showed promising characteristics for potential applications in high-performance DUV photodetectors.

OPTICS COMMUNICATIONS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

Yi Shang et al.

Summary: The Ta-doped Ga2O3 films were successfully grown with uniform, smooth surface morphology and high transparency (>85%) in the wavelength region of 300-800 nm. The films showed low resistivity of 0.089 Omega cm and high carrier concentration of 2.4 x 10(19) cm(-3). XPS spectra confirmed the incorporation of Ta into the films and the presence of Ta5+ ions.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding

Phongsaphak Sittimart et al.

Summary: Heterojunctions of p-type diamond substrates and thin exfoliated n-type beta-Ga2O3 layers were fabricated using a direct-bonding technique at a low temperature. The p(+)-n structure exhibited Ohmic behavior, while the p-n structure showed clear rectifying action.

AIP ADVANCES (2021)

添加到收藏夹

Article Chemistry, Physical

Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Manoj K. Yadav et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

添加到收藏夹

Article Materials Science, Coatings & Films

Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Ali Mahmoodinezhad et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Self-Organized NiO Microcavity Arrays Fabricated by Thermal Treatments

Maria Taeno et al.

CRYSTAL GROWTH & DESIGN (2020)

添加到收藏夹

Article Physics, Multidisciplinary

Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition

YaChao Zhang et al.

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures

Arnab Mondal et al.

NANOTECHNOLOGY (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films

Linan He et al.

OPTICAL MATERIALS (2020)

添加到收藏夹

Article Materials Science, Coatings & Films

Practical guide for curve fitting in x-ray photoelectron spectroscopy

George H. Major et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

All-Oxide NiO/Ga2O3 p-n Junction for Self-Powered UV Photodetector

Yachao Wang et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Self-Powered β-Ga2O3 Solar-Blind Photodetector Based on the Planar Au/Ga2O3 Schottky Junction

Yusong Zhi et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates

V. Nikolaev et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Vertical α/β-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors

C. Wu et al.

MATERIALS TODAY PHYSICS (2020)

添加到收藏夹

Article Chemistry, Physical

Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition

Hong Yang et al.

APPLIED SURFACE SCIENCE (2019)

添加到收藏夹

Article Physics, Applied

Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy

An-Na Cha et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Influence of dislocations on the thermal decomposition of GaN

Yumin Zhang et al.

MATERIALS LETTERS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electronic Structure of Tungsten-Doped β-Ga2O3 Compounds

Vishal Zade et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition

Yuanpeng Chen et al.

CRYSTAL GROWTH & DESIGN (2018)

添加到收藏夹

Review Physics, Applied

A review of Ga2O3 materials, processing, and devices

S. J. Pearton et al.

APPLIED PHYSICS REVIEWS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique

N. Zainal et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios

Shinji Nakagomi et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)

添加到收藏夹

Article Multidisciplinary Sciences

One-step fabrication of porous GaN crystal membrane and its application in energy storage

Lei Zhang et al.

SCIENTIFIC REPORTS (2017)

添加到收藏夹

Article Physics, Applied

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Tatsuro Watahiki et al.

APPLIED PHYSICS LETTERS (2017)

添加到收藏夹

Article Chemistry, Physical

Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes

Yingyu Qu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

添加到收藏夹

Article Physics, Applied

Energy band alignment of high-k oxide heterostructures at MoS2/Al2O3 and MoS2/ZrO2 interfaces

Sangram K. Pradhan et al.

JOURNAL OF APPLIED PHYSICS (2016)

添加到收藏夹

Article Crystallography

TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

M. G. Mynbaeva et al.

JOURNAL OF CRYSTAL GROWTH (2016)

添加到收藏夹

Article Chemistry, Physical

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability, and Interdiffusion

E. J. Rubio et al.

Journal of Physical Chemistry C (2016)

添加到收藏夹

Article Physics, Applied

High optical and structural quality of GaN epilayers grown on ((2)over-bar01) β-Ga2O3

M. M. Muhammed et al.

APPLIED PHYSICS LETTERS (2014)

添加到收藏夹

Article Physics, Applied

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

C. V. Ramana et al.

JOURNAL OF APPLIED PHYSICS (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Zn Doping-Induced Shape Evolution of Microcrystals: The Case of Cuprous Oxide

Bojun Heng et al.

CRYSTAL GROWTH & DESIGN (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Modifying optical properties of GaN nanowires by Ga2O3 overgrowth

Yi-Kuang Lee et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2012)

添加到收藏夹

Article Physics, Applied

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

Hung-Wen Huang et al.

APPLIED PHYSICS LETTERS (2010)

添加到收藏夹

Article Chemistry, Multidisciplinary

Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3-SnO2 Heterostructures for Gas Sensing Applications

Lena Mazeina et al.

CRYSTAL GROWTH & DESIGN (2009)

添加到收藏夹

Article Materials Science, Multidisciplinary

Defect structure in GaN pyramids

JK Farrer et al.

JOURNAL OF MATERIALS SCIENCE (2006)

添加到收藏夹

Article Chemistry, Physical

Systematic XPS studies of metal oxides, hydroxides and peroxides

JC Dupin et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.