期刊
CRYSTAL GROWTH & DESIGN
卷 22, 期 8, 页码 4708-4720出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.1c01454
关键词
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资金
- Ministry of Human Resource Development (MHRD)
- Ministry of Electronics and Information Technology (MeitY)
- Department of Science and Technology (DST)
- Thematic Unit of Excellence for Nano Science and Technology project from DST Nano Mission
This study uses density functional theory to investigate the growth mechanism of MoS2 and WS2 on α-sapphire substrate, and explains the growth characteristics and differences between MoS2 and WS2 growth by performing experiments and using nucleation theory framework.
Understanding the underlying mechanism to growth of a material greatly assists control over its synthesis. In this investigation, we employ density functional theory to calculate the desorption and diffusion energy barriers to growth of MoS2 and WS2 from a M-C-O-H-S system on c-plane alpha sapphire, a commonly used substrate. We then perform experiments and use these numbers within a nucleation theory framework to explain growth characteristics. Nucleation rates, densities, and step velocities are predicted and analyzed. In particular, differences between MoS2 and WS2 growth -larger nucleation densities and small island sizes in WS2 compared to MoS2-are explained and correlated to the differences between energy barriers to desorption and diffusion of W and Mo.
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