Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters

Selective area growth of Ga-polar GaN nanowires by metal organic chemical vapor deposition provides a path to achieve arrays of uniform nanowires with controllable dimensions. A systematic investigation on the growth parameters of GaN nanowires demonstrates that although a low V/III ratio and low precursor flows are necessary, V/III ratio is not a sufficient parameter to determine the morphology of GaN nanowires. Partial pressures of the constituent gases, on the other hand, can be used as a single parameter, at a particular growth temperature, to explain the resulting morphology. By correlating the partial pressures of precursors and H-2 in the carrier gas with the morphology of the nanowires, we can then determine the flow rates for precursors and hence the range of V/III ratios required for achieving the growth of GaN nanowires.

Automated summary

Selective area growth of Ga-polar GaN nanowires by metal organic chemical vapor deposition allows for the control of nanowire dimensions by adjusting the partial pressures of the constituent gases.