4.7 Article

Feasibility of polarized laser scattering in detecting the grinding-induced subsurface damage in SiCf/SiC ceramic matrix composite

期刊

COMPOSITE STRUCTURES
卷 291, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.compstruct.2022.115660

关键词

Ceramic matrix composite; Machining-induced damage; Polarized laser scattering; Porosity; Crack

资金

  1. National Natural Science Foundation of China [92060203, 52105453]
  2. China Postdoctoral Science Foundation [2020TQ0149, 2021M691569]
  3. National Science and Technology Major Project [2017-VII-0015-0111]

向作者/读者索取更多资源

This study proposes the polarized laser scattering (PLS) method to detect the grinding-induced damage of silicon carbide fiber reinforced silicon carbide (SiCf/SiC). It is found that the sensitivity of PLS detection depends on the radiation spot size of the laser beam, with a smaller spot size increasing the sensitivity to MID but also increasing the sensitivity to pre-existing defects. Conversely, a larger spot size decreases the sensitivity. This study is important for expanding the detection of MID of CMC.
Given the urgent demand in the effective method for detecting the machining-induced damage (MID) of ceramic matrix composite (CMC). This study first time proposes the polarized laser scattering (PLS) method to detect the grinding-induced damage of silicon carbide fiber reinforced silicon carbide (SiCf/SiC). The feasibility of the PLS detection is demonstrated. Moreover, the sensitivity of PLS detection is found dependent on the radiation spot size of the laser beam. Decreasing the radiation spot size, the sensitivity to MID increases. However, the sensitivity to the pre-existed defects also increases, which would disturb the detection of MID. While increasing the radiation spot size, the intensity of the PLS detection decreases. In this study, when the radiation spot size is 66, 132, or 264 mu m, the PLS method is suitable for detecting the grinding-induced damage of SiCf/SiC. This study is important for expanding the detection of the MID of CMC.

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