Artificial Antiferromagnets Possessing Extended Zero-, One-, Two-, and Three-Dimensional Structures

Layered (2D) artificial (or synthetic) antiferromagnets are fabricated by atom deposition techniques and possess very thin, nanometer-scale, magnetically ordered layers separated by a very thin nonmagnetic layer that antiferromagnetically couples the magnetic layers. Artificial antiferromagnets were crucial in the discovery of the giant magnetic effect (GMR), which had an incredible impact on the evolution of computer memory and its applications, and nucleated the dawn of spintronics (magnetoelectrics). The fundamental structural motif has been more recently achieved by using synthetic chemical methods that led to insulating artificial antiferromagnets. Examples of magnetically ordered layers that are antiferromagnetic coupled to form artificial antiferromagnets have been extended to isolated ions (0D) as well as extended chain (1D) and extended network 3D structures, and new phenomena and applications are anticipated as insulating antiferromagnets are more effective at propagating spin currents with respect to dielectric materials.

Automated summary

Layered artificial antiferromagnets, fabricated using atom deposition techniques, consist of nanometer-scale magnetically ordered layers separated by a nonmagnetic layer. They played a crucial role in the discovery of the giant magnetic effect (GMR) and the development of computer memory and spintronics. Insulating antiferromagnets, formed using synthetic chemical methods, are expected to enable new phenomena and applications by enhancing the propagation of spin currents.