Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system

Article Computer Science, Information Systems

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

Dongjoo Bae et al.

Summary: In this study, a hydrogen passivation technique was applied to Zr3N2 based RRAM devices to reduce the operating current level and improve the performance and stability of resistive random-access memory.

IEEE ACCESS (2022)

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Article Chemistry, Physical

Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect

Seokyeon Yun et al.

Summary: The study explored the creation of a Ni/ZnO/TiN memristor device for emulating an artificial synapse in a neuromorphic system, characterized through various chemical and material analysis methods. The device exhibited multi-level resistive switching behavior, showcasing both short-term and long-term memory characteristics. Different parameters, such as voltage and time interval, were found to impact the conductance of the device during repetitive pulses.

APPLIED SURFACE SCIENCE (2022)

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Article Engineering, Electrical & Electronic

Performance Analysis of Forming Free Switching Dynamics of e-Beam Evaporated SnOx Based Resistive Switching Device

Chandra Prakash Singh et al.

Summary: This article investigates the influence of copper electrode on the electrical response of tin-oxide-based bipolar resistive switching (RS) device. The crystal structure, energy bandgap, surface morphology, and nanostructure of the device are characterized, and the electrical behavior is recorded. The results show that the device exhibits reversible RS phenomena and good resistive window.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Chemistry, Physical

Non-volatile and volatile switching behaviors determined by first reset in Ag/TaOx/TiN device for neuromorphic system

Juyeong Pyo et al.

Summary: The study fabricated the Ag/TaOx/TiN device and confirmed its structure with TEM and EDS, showing non-volatile bi-polar resistive switching and volatile threshold switching. By controlling different pulse streams, the study demonstrated temporal learning in volatile switching with short-term memory effect, outputting the letter P in the reservoir computing system.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Chemistry, Physical

Synaptic plasticity features and neuromorphic system simulation in AlN-based memristor devices

Osung Kwon et al.

Summary: In this paper, the memory characteristics of Ag/AlN/TiN devices for neuromorphic systems were investigated. The thickness and components of the device stack were verified using TEM and EDS. The long-term memory (LTM) and short-term memory (STM) characteristics were determined by compliance current (CC), with LTM characteristics observed at high CC and STM characteristics observed at low CC. The I-V curves and potentiation and depression for LTM characteristics were studied. The switching and conduction mechanisms of Ni/Ag/AlN/TiN devices were analyzed using schematic drawings and energy band diagrams. The linearity of potentiation and depression was compared, and the accuracy of Modified National Institute of Standards and Technology (MNIST) pattern was evaluated based on the linearity.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Materials Science, Multidisciplinary

Spray deposited zinc tungstate thin film for non-volatile memory application

Amitkumar R. Patil et al.

Summary: The Ag/ZWO/FTO resistive switching (RS) device was fabricated using the chemical spray pyrolysis method, and its crystalline phase, morphology, and atomic composition were effectively characterized through different physicochemical techniques. The fabricated device exhibits good bipolar resistive switching behavior with low switching voltage and good endurance and retention.

MATERIALS LETTERS (2022)

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Article Engineering, Electrical & Electronic

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Pranav K. Katkar et al.

Summary: In this study, a functional Co-x(PO4)(2) nanomaterial was synthesized for resistive memory and neuromorphic computing applications. The synthesized nanomaterial was well characterized and its properties were analyzed. The fabricated device showed bipolar resistive switching and memristive properties, with good endurance and memory retention.

ACS APPLIED ELECTRONIC MATERIALS (2022)

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Article Mathematics, Interdisciplinary Applications

Logic-in-memory application of CMOS compatible silicon nitride memristor

Dahye Kim et al.

Summary: This paper investigates the characteristics of bipolar and unipolar RRAM in CMOS-compatible devices, successfully demonstrating most Boolean functions and proposing solutions to represent the remaining ones that cannot be represented.

CHAOS SOLITONS & FRACTALS (2021)

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Article Engineering, Electrical & Electronic

On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit

Ji-Hoon Ahn et al.

Summary: Neuromorphic systems are advantageous in terms of energy consumption and parallel operation for artificial intelligence hardware. The paper proposes an AML method to address on-chip learning and verifies its feasibility through system-level simulation.

SOLID-STATE ELECTRONICS (2021)

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Article Materials Science, Multidisciplinary

Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate

Dahye Kim et al.

Summary: In this work, the characteristics of Ni/ZnO/n-type Si RRAM device under different compliance currents were studied, showing the best variability at higher compliance current (5 mA) and proposing the appropriate compliance current for device operation. Comprehensive evaluation of device characteristics was conducted through statistical analysis and validation.

METALS (2021)

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Article Materials Science, Multidisciplinary

Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

Juyeong Pyo et al.

Summary: This work demonstrates the dual nature of threshold switching and non-volatile memory switching in Ag/SnOx/TiN memory devices, with the performance being influenced by different current values. Variations in resistance states at different CC values, as well as the application of pulse operation in volatile switching, set, reset, and negative-set behaviors, were observed during experiments.

METALS (2021)

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Article Nanoscience & Nanotechnology

Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

Jinwoong Yang et al.

Summary: This study fabricates and characterizes a Ti/TiO2/Si device with different dopant concentrations for neuromorphic systems. The device exhibits interface-type bipolar resistive switching with long-term memory, and achieves pattern-recognition accuracy over 85% using conductance as weight in the network. Short-term memory characteristics are investigated, showing that dynamic range is controlled by pulse amplitude and conductance decay depends on pulse interval. A reservoir computing system is built using the short-term effect of the device, allowing differentiation of 16 states for pattern recognition.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Mathematics, Interdisciplinary Applications

Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

Hojeong Ryu et al.

Summary: In this paper, a high-performance reservoir computing system is proposed as an alternative to von Neumann computing systems, utilizing a memristor-based hardware design. The system's advantage lies in training only at the readout layer, leading to good energy efficiency and low power consumption.

CHAOS SOLITONS & FRACTALS (2021)

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Article Computer Science, Information Systems

Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode

Jinsu Jung et al.

Summary: The study investigates the self-rectifying characteristics of p-Si/O-doped ZrN/TiN structures to overcome interference between neighboring cells in array structures. The proposed device shows nonlinear selection characteristics and a rectifying region within -2V, suppressing interference during reading operation. It exhibits the highest current ratio at -4.5V and maximum current limiting capability above -2V, with stable retention and high read margin at 125 degrees C.

IEEE ACCESS (2021)

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Review Nanoscience & Nanotechnology

Resistive switching materials for information processing

Zhongrui Wang et al.

NATURE REVIEWS MATERIALS (2020)

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Review Physics, Applied

Reliability of analog resistive switching memory for neuromorphic computing

Meiran Zhao et al.

APPLIED PHYSICS REVIEWS (2020)

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Article Neurosciences

Spatial Properties of STDP in a Self-Learning Spiking Neural Network Enable Controlling a Mobile Robot

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FRONTIERS IN NEUROSCIENCE (2020)

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Article Neurosciences

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

Alexey Mikhaylov et al.

FRONTIERS IN NEUROSCIENCE (2020)

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Article Materials Science, Multidisciplinary

Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

Mehr Khalid Rahmani et al.

RESULTS IN PHYSICS (2020)

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Article Chemistry, Physical

Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices

Asif Ali et al.

APPLIED SURFACE SCIENCE (2020)

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Article Chemistry, Analytical

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Junhyeok Choi et al.

MICROMACHINES (2020)

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Article Chemistry, Multidisciplinary

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

Hyojong Cho et al.

NANOMATERIALS (2020)

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Review Chemistry, Multidisciplinary

Organic and hybrid resistive switching materials and devices

Shuang Gao et al.

CHEMICAL SOCIETY REVIEWS (2019)

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Article Engineering, Electrical & Electronic

Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device

Firman Mangasa Simanjuntak et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

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Article Engineering, Electrical & Electronic

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Cecilia Giovinazzo et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

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Article Physics, Applied

Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy

Anuj Kumar et al.

APPLIED PHYSICS LETTERS (2018)

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Article Multidisciplinary Sciences

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

A. Ranjan et al.

SCIENTIFIC REPORTS (2018)

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Negative differential resistance and resistive switching in SnO2/ZnO interface

Rohit Pant et al.

JOURNAL OF APPLIED PHYSICS (2017)

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Multibit memory operation of metal-oxide bi-layer memristors

Spyros Stathopoulos et al.

SCIENTIFIC REPORTS (2017)

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Article Materials Science, Ceramics

Metal oxide resistive switching memory: Materials, properties and switching mechanisms

D. Kumar et al.

CERAMICS INTERNATIONAL (2017)

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Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Jidong Jin et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

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All-Metal-Nitride RRAM Devices

Zhiping Zhang et al.

IEEE ELECTRON DEVICE LETTERS (2015)

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Review Physics, Applied

Resistive switching phenomena: A review of statistical physics approaches

Jae Sung Lee et al.

APPLIED PHYSICS REVIEWS (2015)

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Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

Mrinal K. Hota et al.

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Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering

Jesus A. Caraveo-Frescas et al.

ACS NANO (2013)

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Review Chemistry, Multidisciplinary

Nanoscale resistive switching devices: mechanisms and modeling

Yuchao Yang et al.

NANOSCALE (2013)

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CO oxidation on nanostructured SnOx/Pt(111) surfaces: unique properties of reduced SnOx

Stephanus Axnanda et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2012)

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Metal-Oxide RRAM

H. -S. Philip Wong et al.

PROCEEDINGS OF THE IEEE (2012)

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Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Byungjin Cho et al.

ADVANCED FUNCTIONAL MATERIALS (2011)

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Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Kazuki Nagashima et al.

APPLIED PHYSICS LETTERS (2009)

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Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

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Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system

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