4.7 Article

GQDs/W18O49/tetragonal WO3 loaded on CN1-x to construct heterostructures for improving electrochemical performance

期刊

CERAMICS INTERNATIONAL
卷 48, 期 20, 页码 31008-31015

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.07.062

关键词

g-C3N4; GQDs; W18O49; WO3; Electrochemical; Mechanism

资金

  1. National Natural Science Foundation of China [51204129]

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In this study, GQDs/W18O49/WO3 (WCW) were loaded on g-C3N4 with defects (CN1-x) using hydrothermal synthesis. The CN1-x@WCW composites exhibited improved photoelectric efficiency, interfacial electron transfer, and electron lifetime compared to WCW.
In this study, the prepared GQDs/W18O49/WO3 (WCW) were loaded on g-C3N4 with defects (CN1-x) under the action of hydrothermal synthesis. The structure, morphology, optical properties, functional groups and surface group properties of the CN1-x@WCW composites were determined by XRD, TEM, UV-vis, FTIR and XPS tests. The electrochemical properties of the CN1-x@WCW composite were studied by i-t, EIS and M -S analysis. Compared with WCW, the instantaneous photoelectric efficiency, the photon current efficiency under the applied bias voltage, interfacial electron transfer and electron lifetime of CN1-x@WCW had been greatly improved. The results indicated that two-dimensional CN1-x with good conductivity could transfer electrons quickly, reduce the interfacial resistance and prolong the lifetime of electrons, thus inhibiting the recombination of photogenerated electron-hole pairs in WCW semiconductor. In addition, the possible mechanism was proposed and analyzed from the point of view of electron transmission.

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