4.7 Article

Microstructural dependence of defect formation in iron-oxide thin films

期刊

APPLIED SURFACE SCIENCE
卷 589, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2022.152844

关键词

Iron-oxide; Passivating; Thin films; Positron annihilation spectroscopy; 4DSTEM

资金

  1. FUTURE (Fundamental Understanding of Transport Under Reactor Extremes), an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences
  2. Laboratory Directed Research and Development program of Los Alamos National Laboratory [20210760PRD1]
  3. U.S. Department of Energy's NNSA [89233218CNA000001]
  4. U.S. DOE [DE-AC05-76RL01830]
  5. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]

向作者/读者索取更多资源

Passivating iron-oxide films were grown to simulate the corrosion process in a nuclear reactor environment. The morphology and defect content of the films varied depending on the growth method, with different oxide films exhibiting different microstructures and defect characteristics.
Passivating iron-oxide films are grown atop iron films simulating the corrosion process in a nuclear reactor environment. Two oxide films grown via physical vapor deposition at 600 degrees C and room temperature exhibited dense-epitactic and columnar-polycrystalline, microstructures respectively. A third oxide film grown in open air at 600 degrees C exhibited an eqiuaxed, porous morphology. Cubic maghemite and magnetite phases in each oxide film were identified via grazing incidence X-ray diffraction. Positron annihilation spectroscopy was used to characterize point defects and measure their depth and size distributions in each oxide layer and showed a range of average positron lifetimes from 0.23 ns in the high temperature, vapor deposited film, 0.35 ns in the room temperature-grown film, and 0.31 ns in the thermally grown oxide. These data indicate that the film morphology, which varies greatly in these films, leads to very different defect content. Finally, four-dimensional scanning transmission electron microscopy was used to measure the internal stress of each film and was correlated to the strain state presented in the X-ray diffraction spectra. The defect formation in each film is reasoned through using a thin film growth model.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据