期刊
APPLIED SURFACE SCIENCE
卷 592, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2022.153243
关键词
Cu bonding; 3DIC; Low temperature bonding; Metal bonding; Bonding mechanism
类别
资金
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology, Taiwan [MOST 111-2634-F-A49-008-, MOST 109-2221-E-009-023-MY3, MOST 110-2221-E-A49-086-MY3]
This research investigated the bonding mechanism of low-temperature Cu-Cu thermal compression bonding (TCB) with passivation layer and found that grain boundary diffusion of Cu leads to the formation of amorphous Cu at the bonding interface in the passivated-Cu structure. Through the diffusion of Cu atoms and recrystallization of amorphous Cu, voids at the bonding interface can be eliminated, resulting in high quality bonding results with low thermal budget.
The bonding mechanism of low-temperature Cu-Cu thermal compression bonding (TCB) with passivation layer has been investigated in this research. After the structures of Cu with Au passivation and Cu with Pd passivation were bonded at 180 degrees C, the analyses of transmission electron microscope (TEM) were performed for the bonded structures to explore the bonding behavior of passivated-Cu during different stages of the TCB process. The results indicate that grain boundary diffusion of Cu leads to formation of amorphous Cu at the bonding interface in the passivated-Cu structure. Furthermore, diffusion of Cu atoms and recrystallization of amorphous Cu into polycrystalline Cu can eliminate voids at the bonding interface during the TCB process. Comparing to conventional Cu direct bonding with high crystallinity Cu at the bonding interface, passivated-Cu bonding can be achieved by much lower energy, leading to high quality bonding results with low thermal budget.
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