☆ 4.6 Article

Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications

APPLIED PHYSICS LETTERS (2022)

评价这篇论文

主要评分表示论文的整体质量水平。次要评分独立反映论文的优点或缺点。

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

© Peeref 2019-2024. All rights reserved.