Resistive switching behavior of the memristor based on WS2 nanosheets and polyvinylpyrrolidone nanocomposites

Ag/tungsten disulfide (WS2)-polyvinylpyrrolidone (PVP)/Cu memristors based on monolayer WS2 nanosheets and polyvinylpyrrolidone (PVP) nanocomposites were fabricated, and the influence of PVP content on the switching behaviors was investigated. The results indicate that the WS2-PVP based memristors show write-once read-many times (WORM) memory behavior. Remarkable resistive switching results such as a low operating voltage (V-SET < 1 V), a high switching ratio (> 10(3)), good endurance (> 100 cycles), and data retention time (> 200 s) are obtained. With the increase in the PVP content, the device V-SET gradually increases, and the switching ratio first slightly increases and then remarkably decreases. The double logarithm I-V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism, which is explained with the energy band diagram. Published under an exclusive license by AIP Publishing.

Automated summary

Ag/tungsten disulfide (WS2)-polyvinylpyrrolidone (PVP)/Cu memristors based on monolayer WS2 nanosheets and PVP nanocomposites exhibit write-once read-many times (WORM) memory behavior with low operating voltage, high switching ratio, good endurance, and long data retention time.