期刊
APPLIED PHYSICS LETTERS
卷 121, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0096858
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资金
- National Key Research and Development Program of China [2019YFA0307900]
- National Natural Science Foundation of China [U21A2066, 92163210, 51790491, 52125204]
- Fundamental Research Funds for the Central Universities [WK2030000035]
Exotic polarization domain configurations in BiFeO3 nanoislands have been achieved, showing promise for next-generation nanoelectronics and high-density information storage.
Exotic polarization domain configurations in BiFeO3 nanoislands have recently been achieved, promising for exploring next-generation nanoelectronics. Here, different from the earlier reported BiFeO3 nanoislands with a very thin cross-shaped domain wall on LaAlO3 substrates, we observed the cross-shaped domains with a downward polarization separating quad-domains with an upward polarization, which is confirmed by spherical aberration corrected scanning transmission electron microscopy and piezoresponse force microscopy. Interestingly, the cross- and quad-domains show diode-like transport behaviors but with different rectification directions owing to their different polarization orientations. Specifically, an intriguing two-step ferroelectric polarization switching can be realized, which locally results in a tri-state nonvolatile memory. These results broaden the understanding of the interesting polarization configurations in BiFeO3 nanoislands and highlight their potential as high-density information storage. Published under an exclusive license by AIP Publishing.
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