Robust technology computer-aided design of gated quantum dots at cryogenic temperature

We present non-linear Poisson and Schrodinger simulations of an industrially fabricated gated quantum dot device at 100 mK using the Quantum-Technology Computer-Aided Design (QTCAD) software [see QTCAD: A Computer-Aided Design Tool for Quantum-Technology Hardware, Nanoacademic Technologies Inc. (2022)]. Using automatic adaptive meshing, the 3D conduction band edge profile of an ultra-thin body and buried oxide fully-depleted silicon-on-insulator field-effect transistor is calculated under steady-state and isothermal conditions. This profile is shown to display potential wells consistent with the experimental observation of side-gate-activated corner quantum dots. The electronic structure of these dots is investigated as a function of applied gate bias within the effective mass theory. Crucially, convergence at 100 mK is shown to be a robust feature of QTCAD's non-linear Poisson solver; convergence is consistently achieved without user intervention for 10 out of 10 random gate bias configurations. Published under an exclusive license by AIP Publishing.

Automated summary

This study presents non-linear Poisson and Schrodinger simulations of an industrially fabricated gated quantum dot device at 100 mK using QTCAD software, showing convergence without user intervention for 10 random gate bias configurations. Results indicate potential wells consistent with experimental observations of corner quantum dots.