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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
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D. Zhu et al.
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F. Medjdoub et al.
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Diego Marti et al.
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QX Guo et al.
VACUUM (2006)
Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
S Raghavan et al.
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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee et al.
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