Selective area growth of beta-Ga2O3 by HCl-based halide vapor phase epitaxy

We demonstrated selective area growth of beta-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) beta-Ga2O3 substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to their smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for beta-Ga2O3-based power devices. (C) 2022 The Japan Society of Applied Physics

Automated summary

Selective area growth of beta-Ga2O3 was demonstrated by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) beta-Ga2O3 substrates. High-aspect-ratio structures with (100) sidewall facets were observed for stripe windows along [010] and [001] directions on the respective substrates. These structures can be applied to trenches and fins for beta-Ga2O3-based power devices.