☆ 4.5 Article

Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films

APPLIED PHYSICS EXPRESS (2022)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Optics

Blue light excitable red emitting ZnO and its blend for high CRI white light emitting diodes applications

B. Sundarakannan et al.

Summary: The red-emitting zinc oxide material prepared exhibits a broad band emission under blue light excitation with a peak emission at 540 nm and strong infrared light absorption. When excited by blue LEDs, it emits bright broad band red light with a peak emission at 625 nm and a CIE chromaticity value of (x=0.65, y=0.37).

JOURNAL OF LUMINESCENCE (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Lead-free Double Perovskite Cs2AgIn0.9Bi0.1Cl6 Quantum Dots for White Light-Emitting Diodes

Yuqing Zhang et al.

Summary: A novel lead-free double perovskite quantum dots were successfully fabricated for white light-emitting diodes with excellent optoelectronic performance and stability. The device exhibits good luminous properties and stability, making it suitable for future lighting applications.

ADVANCED SCIENCE (2022)

添加到收藏夹

Article Physics, Condensed Matter

Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes

Yafei Huang et al.

Summary: Eu-doped Ga2O3 film was grown on n-Si substrate by pulsed laser deposition, confirming excellent structural and optical properties. A Ga2O3:Eu/n-Si based LED was fabricated with low driven voltage and red electroluminescence, suggesting the potential for developing full-color displays or lighting technology using Ga2O3 as a host material.

SUPERLATTICES AND MICROSTRUCTURES (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Efficient and bright warm-white electroluminescence from lead-free metal halides

Hong Chen et al.

Summary: By introducing an organic additive into the precursor solutions, trap states can be reduced, enhancing the photoluminescence quantum efficiency of metal halide films and increasing the surface potential to facilitate hole injection and transport in LEDs. Therefore, lead-free metal halide LEDs show high brightness and efficiency, making them promising for solution-processed white LED applications.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Physics, Applied

Highly efficient and stable electroluminescence from Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition on silicon

Li Yang et al.

Summary: Metal-oxide-semiconductor light-emitting devices based on Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition exhibit intense 1.53 μm electroluminescence with low turn-on voltage, high injection current, improved optical power density, and good stability, demonstrating potential for various optoelectronic applications.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Review Optics

Research progress of full electroluminescent white light-emitting diodes based on a single emissive layer

Hengyang Xiang et al.

Summary: The urgent demand for lighting technology innovation has driven research on white light-emitting diodes (WLEDs) based on a single emissive layer (SEL) fabricated by the solution method. These WLEDs offer advantages such as low cost, ultrathin design, and flexibility, making them a promising option for future lighting applications. Notable developments, including the use of perovskite materials, have the potential to further enhance the performance of SEL-WLEDs, and future research directions are being proposed to continue advancing this technology.

LIGHT-SCIENCE & APPLICATIONS (2021)

添加到收藏夹

Article Engineering, Environmental

Single phase white LED phosphor Ca3YAl3B4O15:Ce3+,Tb3+,Sm3+ with superior performance: Color-tunable and energy transfer study

Wasim Ullah Khan et al.

Summary: This study investigated the incorporation of rare-earth ions into Ca3YAl3B4O15 (CYAB) for the fabrication of white light-emitting diodes, achieving exceptional optical properties and thermal stability.

CHEMICAL ENGINEERING JOURNAL (2021)

添加到收藏夹

Article Physics, Applied

Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides

Zewei Chen et al.

Summary: Thulium doped gallium oxides films were deposited on Si substrates by pulsed laser deposition method, resulting in blue emissions from Tm-Ga2O3/Si LEDs. The threshold voltage of Tm-Ga2O3/Si LEDs is lower than Tm-GaN/Si devices. Combining emissions from different dopants in gallium oxides enables full-color LEDs with a single host of Ga2O3.

APPLIED PHYSICS EXPRESS (2021)

添加到收藏夹

Article Physics, Applied

Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films

Yafei Huang et al.

Summary: Monolithic and phosphor-free LEDs based on vertically integrated Ga2O3:Tm, Ga2O3:Eu, and Ga2O3:Er films have achieved direct white light emission with current-controlled color tunability. The white light emission results from the combination of emissions from different ions, demonstrating full color tunability by intentionally modifying the thickness ratios of different monolayers. This study paves the way for full-color displays and solid-state lighting technology using rare-earth doped Ga2O3.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Physics, Applied

Determination of type-ΙΙ band alignment β-Ga2O3/GaAs heterojunction interface by x-ray photoelectron spectroscopy

Xueqiang Ji et al.

Summary: The band alignment of the beta-Ga2O3/GaAs heterojunction interface was accurately determined using x-ray photoelectron spectroscopy, providing useful information for the application in beta-Ga2O3/GaAs-based devices.

JOURNAL OF APPLIED PHYSICS (2021)

添加到收藏夹

Article Optics

Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film

Gaofeng Deng et al.

Summary: A bright yellow light from vertically integrated LED is achieved by depositing multilayer structured Er and Eu doped Ga2O3 films on different substrates using pulsed laser deposition. The yellow emission is driven at a low voltage of 10V and originates from the simultaneous excited emission of Er3+ and Eu3+ ions. This work provides a potential pathway for developing low-voltage driven color LED utilizing rare earth doped Ga2O3 films.

JOURNAL OF LUMINESCENCE (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction

Gaofeng Deng et al.

Summary: A green light-emitting device based on Er:Ga2O3/GaAs heterojunction was fabricated, with Erbium doped Ga2O3 film prepared on a p-GaAs substrate. The bright green electroluminescence, dominated by 524 and 549 nm peaks, was determined to be caused by the 4f-electron transitions of Er3+. It was found that the Er-related green electroluminescence arose from energy transfer from defects in the Ga2O3 host to the Er ions.

OPTICAL MATERIALS (2021)

添加到收藏夹

Article Chemistry, Physical

New physical insight into crystal structure, luminescence and optical properties of YPO4:Dy3+\Eu3+\Tb3+ single-phase white-light-emitting phosphors

Sayed Ali Khan et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

添加到收藏夹

Article Physics, Applied

Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

S. Ichikawa et al.

JOURNAL OF APPLIED PHYSICS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Toward RGB LEDs based on rare earth-doped ZnO

J. L. Frieiro et al.

NANOTECHNOLOGY (2020)

添加到收藏夹

Article Chemistry, Physical

Non-contact luminescence thermometer based on upconversion emissions from Er3+-doped beta-Ga2O3 with wide bandgap

Liang Chen et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Ca8Mg7Si9N22:Ce3+-A Yellow-Emitting Nitride Phosphor for White Light Emitting Diodes

Chao Li et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Physics, Applied

Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs

Zhengwei Chen et al.

APPLIED PHYSICS EXPRESS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Rare Earth Doped Zinc Oxide Nanophosphor Powder: A Future Material for Solid State Lighting and Solar Cells

Vinod Kumar et al.

ACS PHOTONICS (2017)

添加到收藏夹

Review Chemistry, Multidisciplinary

Efficient pure green emission from Er-doped Ga2O3 films

Zhengwei Chen et al.

CRYSTENGCOMM (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Designing Dual Emissions via Co-doping or Physical Mixing of Individually Doped ZnO and Their Implications in Optical Thermometry

Subrata Senapati et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Physics, Multidisciplinary

Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Matthias Auf Der Maur et al.

PHYSICAL REVIEW LETTERS (2016)

添加到收藏夹

Article Optics

Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures

Seung-Hyuk Lim et al.

LIGHT-SCIENCE & APPLICATIONS (2016)

添加到收藏夹

Article Materials Science, Multidisciplinary

Toward Smart and Ultra-efficient Solid-State Lighting

Jeffrey Y. Tsao et al.

ADVANCED OPTICAL MATERIALS (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes

Hieu Pham Trung Nguyen et al.

NANO LETTERS (2013)

添加到收藏夹

Article Physics, Applied

A yellow-emitting Ce3+ phosphor, La1-xCexSr2AlO5, for white light-emitting diodes

Won Bin Im et al.

APPLIED PHYSICS LETTERS (2008)

添加到收藏夹

Article Physics, Applied

Voltage-controlled variable light emissions from GaN codoped with Eu, Er, and Tm

L. Zhang et al.

APPLIED PHYSICS LETTERS (2007)

添加到收藏夹

Article Physics, Applied

Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors

RJ Xie et al.

APPLIED PHYSICS LETTERS (2006)

添加到收藏夹

Article Physics, Applied

Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu

DS Lee et al.

APPLIED PHYSICS LETTERS (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.