Growth of heteroepitaxial La and Mn co-substituted BiFeO3 thin films on Si (100) substrate by pulsed laser deposition

In this work, heteroepitaxial Bi0.90La0.10Fe0.95Mn0.05O3 (BLFMO) thin films have been grown on Si (100) substrate using LaNiO3/CeO2/Y0.08Zr0.92O3 buffer layers and on SrTiO3 (STO) substrate using pulsed laser deposition. SrRuO3 (SRO) has been used as a bottom electrode in both cases. AC conductivity analysis reveals that BLFMO films deposited on SrTiO3 (STO) substrate are governed by translational hopping, while those deposited on Si are governed by relocalized reorientation hopping. Also, films on STO have DC conductivity dominance over the low frequency range. The remnant polarization for the films deposited on Si and STO is 24 and 66 mu C/cm(2), while the coercive field is 280 kV/cm and 251 kV/cm, respectively. Impedance and modulus analysis reveals that both the samples show electrical heterogeneity. The leakage current mechanism can be well explained using space charge limited current (SCLC) and Fowler-Nordheim (FN) conduction mechanism for films deposited on all substrates. Films deposited on STO have Schottky behavior at low field and SCLC and FN tunneling current mechanism.

Automated summary

In this work, heteroepitaxial Bi0.90La0.10Fe0.95Mn0.05O3 (BLFMO) thin films have been grown on Si (100) substrate using LaNiO3/CeO2/Y0.08Zr0.92O3 buffer layers and on SrTiO3 (STO) substrate using pulsed laser deposition. The electrical properties of the films deposited on different substrates have been studied, revealing distinct conductivity behavior and mechanisms.